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MMSTA55-7-F

P1-P3
MMSTA55/MMSTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available
(MMSTA05/MMSTA06)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMSTA55 Marking K2H, K2G (See Page 3)
• MMSTA56 Marking K2G (See Page 3)
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
E
B
C
A
M
J
L
ED
B
C
H
K
G
BE
C
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol MMSTA55 MMSTA56 Unit
Collector-Base Voltage
V
CBO
-60 -80 V
Collector-Emitter Voltage
V
CEO
-60 -80 V
Emitter-Base Voltage
V
EBO
-4.0 V
Collector Current - Continuous (Note 1)
I
C
-500 mA
Power Dissipation (Note 1)
P
d
200 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30167 Rev. 10 - 2 1 of 3
www.diodes.com
MMSTA55/MMSTA56
© Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage MMSTA55
MMSTA56
V
(BR)CBO
-60
-80
⎯
V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage MMSTA55
MMSTA56
V
(BR)CEO
-60
-80
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-4.0
⎯
V
I
E
= -100μA, I
C
= 0
Collector Cutoff Current MMSTA55
MMSTA56
I
CBO
⎯
-100 nA
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
Collector Cutoff Current MMSTA55
MMSTA56
I
CEX
⎯
-100 nA
V
CE
= -60V, I
BO
= 0V
V
CE
= -80V, I
BO
= 0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
100
⎯ ⎯
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.25 V
I
C
= -100mA, I
B
= -10mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-1.2 V
I
C
= -100mA, V
CE
= -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
50
⎯
MHz
V
CE
= -1.0V, I
C
= -100mA,
f = 100MHz
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
50
25 50
75 100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
A
100
150
200
0
0
0.05
0.10
0.15
0.20
0.25
110
100
1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
C
I
I
C
B
= 10
T = -50°C
A
T = 25°C
A
T = 150°C
A
10
1,000
100
1
10
1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
V = 5V
CE
10.1
0.1
10 100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4 Base Emitter Voltage vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
0.9
1.0
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
DS30167 Rev. 10 - 2 2 of 3
www.diodes.com
MMSTA55/MMSTA56
© Diodes Incorporated
1
10
100
110
I , COLLECTOR CURRENT (mA)
Fig. 5 Gain Bandwidth Product vs. Collector Current
C
f,
100
G
AIN BANDWIDT
H
P
R
O
D
U
C
T (M
H
z)
T
V = 5V
CE
Ordering Information (Notes 4 and 6)
Device Packaging Shipping
MMSTA55-7-F SOT-323 3000/Tape & Reel
MMSTA56-7-F SOT-323 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2x
YM
K2x = Product Type Marking Code, e.g. K2H = MMSTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R
S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul
Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7
8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30167 Rev. 10 - 2 3 of 3
www.diodes.com
MMSTA55/MMSTA56
© Diodes Incorporated
P1-P3

MMSTA55-7-F

Mfr. #:
Buy MMSTA55-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT -60V 200mW
Lifecycle:
New from this manufacturer.
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