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IRFB4115PBF

P1-P3P4-P6P7-P9
IRFB4115PbF
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Temperature ( °C )
140
150
160
170
180
190
200
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 3.5mA
-20 0 20 40 60 80 100 120 140 160
V
DS,
Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
E
n
e
r
g
y
(
µ
J
)
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
Fig 12. Threshold Voltage vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
IRFB4115PbF
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.245 0.0059149
0.155 0.0006322
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
C
τ
C
Ci = τi/Ri
Ci= τi/Ri
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆
Tj = 150°C and
Tstart = 25°C (Single Pulse)
IRFB4115PbF
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014
Fig 15. - Typical Recovery Current vs. di
f
/dt
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
10
20
30
40
50
I
R
R
(
A
)
I
F
= 42A
V
R
= 130V
T
J
= 25°C
T
J
= 125°C
Fig 16. - Typical Recovery Current vs. di
f
/dt
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
10
20
30
40
50
I
R
R
(
A
)
I
F
= 62A
V
R
= 130V
T
J
= 25°C
T
J
= 125°C
Fig 18. - Typical Stored Charge vs. di
f
/dt
Fig 17. - Typical Stored Charge vs. di
f
/dt
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
500
1000
1500
2000
2500
Q
R
R
(
n
C
)
I
F
= 42A
V
R
= 130V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
600
1200
1800
2400
3000
Q
R
R
(
n
C
)
I
F
= 62A
V
R
= 130V
T
J
= 25°C
T
J
= 125°C
P1-P3P4-P6P7-P9

IRFB4115PBF

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Buy IRFB4115PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 150V 104A 11mOhm 77nC Qg
Lifecycle:
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