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SQM40061EL_GE3

P1-P3P4-P6P7-P9
SQM40061EL
www.vishay.com
Vishay Siliconix
S17-1623-Rev. A, 23-Oct-17
1
Document Number: 75728
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
PRODUCT SUMMARY
V
DS
(V) -40
R
DS(on)
() at V
GS
= -10 V 0.0051
R
DS(on)
() at V
GS
= -4.5 V 0.0071
I
D
(A) -100
Configuration Single
Package TO-263
TO-263
Top View
G
D
S
G
D
S
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-40
V
Gate-source voltage V
GS
± 20
Continuous drain current
T
C
= 25 °C
a
I
D
-100
A
T
C
= 125 °C -72
Continuous source current (diode conduction)
a
I
S
-100
Pulsed drain current
b
I
DM
-300
Single pulse avalanche current
L = 0.1 mH
I
AS
-41
Single pulse avalanche energy E
AS
84 mJ
Maximum power dissipation
b
T
C
= 25 °C
P
D
150
W
T
C
= 125 °C 50
Operating junction and storage temperature range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
c
R
thJA
40
°C/W
Junction-to-case (drain) R
thJC
1
SQM40061EL
www.vishay.com
Vishay Siliconix
S17-1623-Rev. A, 23-Oct-17
2
Document Number: 75728
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0, I
D
= -250 μA -40 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 - -2.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= -40 V - - -1
μA V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C - - -250
On-state drain current
a
I
D(on)
V
GS
= -10 V V
DS
-5 V -50 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -30 A - 0.0042 0.0051
V
GS
= -10 V I
D
= -30 A, T
J
= 125 °C - - 0.0079
V
GS
= -10 V I
D
= -30 A, T
J
= 175 °C - - 0.0094
V
GS
= -4.5 V I
D
= -25 A - 0.0059 0.0071
Forward transconductance
a
g
fs
V
DS
= -15 V, I
D
= -30 A - 103 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz
- 11 063 14 500
pF Output capacitance C
oss
- 847 1110
Reverse transfer capacitance C
rss
- 757 1000
Total gate charge
c
Q
g
V
GS
= -10 V V
DS
= -20 V, I
D
= -50 A
- 185 280
nC Gate-source charge
c
Q
gs
-25-
Gate-drain charge
c
Q
gd
-30-
Gate resistance R
g
f = 1 MHz 1.8 3.6 5.4
Turn-on delay time
c
t
d(on)
V
DD
= -20 V, R
L
= 0.4
I
D
-50 A, V
GEN
= -10 V, R
g
= 1
-1525
ns
Rise time
c
t
r
- 180 280
Turn-off delay time
c
t
d(off)
- 145 220
Fall time
c
t
f
- 160 250
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
---300A
Forward voltage V
SD
I
F
= -30 A, V
GS
= 0 - -0.84 -1.5 V
SQM40061EL
www.vishay.com
Vishay Siliconix
S17-1623-Rev. A, 23-Oct-17
3
Document Number: 75728
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
60
120
180
240
300
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
10
100
1000
10000
0
36
72
108
144
180
0 20406080100
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
3000
6000
9000
12 000
15 000
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0
36
72
108
144
180
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
0.002
0.004
0.006
0.008
0.010
0.012
0 20406080100
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0
2
4
6
8
10
04080120160200
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
I
D
= 100 A
V
DS
= 20 V
P1-P3P4-P6P7-P9

SQM40061EL_GE3

Mfr. #:
Buy SQM40061EL_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -40V Vds; +/-20V Vgs TO-263; -100A Id
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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