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VS-30CTH02STRL-M3

P1-P3P4-P6P7-P9P10-P11
VS-30CTH02S-M3, VS-30CTH02-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
1
Document Number: 96234
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors 200 V series are the state of the art
hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life
time control, guarantee the best overall
performance, ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
R
200 V
V
F
at I
F
0.78 V
t
rr
typ. 30 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Anode
1
3
2
Base
Common
Cathode
2
Common
Cathode
Anode
Anode
1
3
2
Base
Common
Cathode
2
Common
Cathode
Anode
VS-30CTH02S-M3 VS-30CTH02-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per diode
I
F(AV)
T
C
= 159 °C 15
Aper device 30
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 200
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
, V
R
I
R
= 100 μA 200 - - V
Forward voltage V
F
I
F
= 15 A - 0.92 1.05
V
I
F
= 15 A, T
J
= 125 °C - 0.78 0.85
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 125 °C, V
R
= V
R
rated - 5 300
Junction capacitance C
T
V
R
= 200 V - 57 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-30CTH02S-M3, VS-30CTH02-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
2
Document Number: 96234
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
ns
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - - 30
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-26-
T
J
= 125 °C - 40 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.8 -
A
T
J
= 125 °C - 6.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 37 -
nC
T
J
= 125 °C - 120 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-65 - 175 °C
Thermal resistance, junction to case per diode R
thJC
--1.1°C/W
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) 30CTH02S
Case style TO-262 30CTH02-1
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
100
10
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0.01
0.1
1
10
100
0 100 200
0.0001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
150
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 75 °C
50
0.001
VS-30CTH02S-M3, VS-30CTH02-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
3
Document Number: 96234
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
1000
0 50 100 150 200
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
110
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
05 25201510
180
170
150
140
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
160
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
5
10
15
20
25
RMS limit
DC
P1-P3P4-P6P7-P9P10-P11

VS-30CTH02STRL-M3

Mfr. #:
Buy VS-30CTH02STRL-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200V 2 x 15A IF TO-220AB 200A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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