MCT4

0.048 (1.22)
0.028 (0.71)
45°
0.046 (1.16)
0.036 (0.92)
42
0.195 (4.96)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.560 (14.22)
0.500 (12.70)
0.210 (5.34)
0.170 (4.32)
3
0.100 (2.54) DIA.
1
0.019 (0.48)
0.016 (0.41)
Ø4X
PACKAGE DIMENSIONS
FEATURES
• Hermetically package
• High current transfer ratio; typically 35%
• High isolation resistance; 10
11
ohms at 500 volts
• High voltage isolation emitter to detector
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon
planar phototransistor.
2001 Fairchild Semiconductor Corporation
DS300241 8/13/01 1 OF 6 www.fairchildsemi.com
1
3
2
4 EMITTER
COLLECTOR
ANODE
CATHODE
SCHEMATIC
PHOTOTRANSISTOR OPTOCOUPLER
MCT4
www.fairchildsemi.com 2 OF 6 8/13/01 DS300241
Parameter Symbol Rating Unit
Operating Temperature
T
OPR -55 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Flow) T
SOL-F
260 for 10 sec °C
EMITTER
P
D
Power Dissipation at 25°C Ambient
(1)
90 mW
Continuous Forward Current I
F
40 mA
Reverse Voltage V
R
3V
Forward Current - Peak (1 µs pulse, 300 pps) I
F
(pk) 3.0 A
DETECTOR
P
D
Power Dissipation
25°C Ambient
(2)
200 mW
Collector to Emitter Voltage
V
CEO
30 V
Emitter to Collector Voltage V
ECO
7V
COUPLER
Total Power Dissipation
(3)
P
D
250 mW
Isolation Voltage 1000 VDC
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
ELECTRICAL / OPTICAL CHARACTERISTICS (T
A
=25°C)
PHOTOTRANSISTOR OPTOCOUPLER
MCT4
Parameters Test Conditions Symbol Min Typ Max Units
EMITTER
Forward Voltage
I
F
= 40 mA V
F
1.30 1.50 V
Reverse Current
V
R
= 3.0 V
I
R
0.15 10 µA
Capacitance
V = 0 V
C
150
pF
DETECTOR
Breakdown Voltage
Collector to Emitter
I
C
= 1.0 mA, I
F
= 0 BV
CEO
30 V
Emitter to Collector I
E
= 100 µA, I
F
= 0 BV
ECO
712 V
Leakage Current
Collector to Emitter
V
CE
= 10 V, I
F
= 0 I
CEO
550nA
Capacitance
pF
Collector to Emitter
V
CE
= 0 C
CE
2
INDIVIDUAL COMPONENT CHARACTERISTICS
NOTE:
1. Derate power linearly 1.2 mW/°C above 25°C
2. Derate power linearly 2.67 mW/°C above 25°C
3. Derate power linearly 3.3 mW/°C above 25°C
DC Characteristics Test Conditions Symbol Min Typ Max Units
COUPLED
CTR
DC current Transfer Ratio (note 1)
V
CE
= 10 V, I
F
= 10 mA 15 35 %
Saturation Voltage
I
C
= 500 µA, I
F
= 10 mA
V
CE(SAT)
0.1
V
I
C
= 2 mA, I
F
= 50 mA
0.2 0.5
AC Characteristics Test Conditions Symbol Min Typ Max Units
Capacitance LED to Detector 1.8 pF
Bandwidth (Fig. 5)
Note 2 300 kHz
Rise Time and Fall Time (see operating schematic)
I
C
= 2 mA, V
CE
= 10 V, Note 3
2 µs
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
PHOTOTRANSISTOR OPTOCOUPLER
MCT4
DS300241 8/13/01 3 OF 6 www.fairchildsemi.com
NOTE:
1. The current transfer ratio (I
C
/I
F
) is the ratio of the detector collector current to the LED input current with V
CE
at 10 volts.
2. The frequency at which i
c
is 3 dB down from the 1 kHz value.
3. Rise time (t
r
) is the time required for the collector current to increase from 10% of its final value, to 90%. Fall time (t
f
) is the time required
for the collector current to decrease from 90% of its initial value to 10%.
Characteristic Test Conditions Symbol Min Typ Max Units
Isolation Resistance
V
= 500 VDC
R
ISO
10
11
10
12
!
Breakdown Voltage Time = 1 sec
1000
1500
VDC
ISOLATION CHARACTERISTICS

MCT4

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Transistor Output Optocouplers TO-18 PHOTO TRANS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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