SI2311DS-T1-E3 Datasheet SI2311DS-T1-E3, SI2311DS-T1-GE3 | P1-P3

Vishay Siliconix

Si2311DS

Document Number: 71813

S-80642-Rev. B, 24-Mar-08

www.vishay.com

1

P-Channel 1.8-V (G-S) MOSFET

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFET

APPLICATIONS

• Load Switch

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

- 8

0.045 at V

GS

= - 4.5 V

- 3.5

0.072 at V

GS

= - 2.5 V

- 2.8

0.120 at V

GS

= - 1.8 V

- 2.0

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2311DS (C1)*

* Marking Code

Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free)

Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Surface Mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 8

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

a, b

T

A

= 25 °C

I

D

- 3.5 - 3.0

A

T

A

= 70 °C

- 2.8 - 2.4

Pulsed Drain Current

I

DM

- 10

Continuous Source Current (Diode Conduction)

a, b

I

S

- 0.8 - 0.6

Maximum Power Dissipation

a, b

T

A

= 25 °C

P

D

0.96 0.71

W

T

A

= 70 °C

0.62 0.46

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

100 130

°C/W

Steady State 140 175

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

60 75

RoHS

COMPLIANT

www.vishay.com

2

Document Number: 71813

S-80642-Rev. B, 24-Mar-08

Vishay Siliconix

Si2311DS

Notes:

a. For DESIGN AID ONLY, not subject to production testing.

b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Limits

Unit

Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= - 10 µA

- 8

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.45 - 0.8

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 6.4 V, V

GS

= 0 V

- 1

µA

V

DS

= - 6.4 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 4.5 V

- 6

A

V

DS

≤ - 5 V, V

GS

= - 2.5 V

- 3

Drain-Source On-Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 3.5 A

0.036 0.045

Ω

V

GS

= - 2.5 V, I

D

= - 3 A

0.058 0.072

V

GS

= - 1.8 V, I

D

= - 0.7 A

0.096 0.120

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 3.5 A

9.0 S

Diode Forward Voltage

V

SD

I

S

= - 0.8 A, V

GS

= 0 V

- 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 4 V, V

GS

= - 4.5 V

I

D

≅ - 3.5 A

8.5 12

nCGate-Source Charge

Q

gs

1.5

Gate-Drain Charge

Q

gd

2.1

Input Capacitance

C

iss

V

DS

= - 4 V, V

GS

= 0 V, f = 1 MHz

970

pFOutput Capacitance

C

oss

485

Reverse Transfer Capacitance

C

rss

160

Switching

b

Tur n - O n T i m e

t

d(on)

V

DD

= - 4 V, R

L

= 4 Ω

I

D

≅ - 1.0 A, V

GEN

= - 4.5 V

R

G

= 6 Ω

18 25

ns

t

r

45 65

Turn-Off Time

t

d(off)

40 60

t

f

45 65

Document Number: 71813

S-80642-Rev. B, 24-Mar-08

www.vishay.com

3

Vishay Siliconix

Si2311DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

2

4

6

8

10

12

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V

GS

= 4.5 thru 2.5 V

1 V, 0.5 V

1.5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

2 V

0.00

0.05

0.10

0.15

0.20

0.25

0.30

024681012

V

GS

= 4.5 V

V

GS

= 2.5 V

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

V

GS

= 1.8 V

0

2

4

6

8

0 2 4 6 8 10 12 14

V

DS

= 4 V

I

D

= 3.5 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

12

0.0 0.5 1.0 1.5 2.0 2.5

25 °C

T

C

= - 55 °C

125 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

250

500

750

1000

1250

1500

02468

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 3.5 A

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance R

DS(on)

SI2311DS-T1-E3

SI2311DS-T1-E3

Products related to this Datasheet