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SBAS16DXV6T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 5
1 Publication Order Number:
BAS16DXV6/D
BAS16DXV6
Dual Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Continuous Reverse Voltage V
R
100 V
Recurrent Peak Forward Current I
F
200 mA
Peak Forward Surge Current
Pulse Width = 10 ms
I
FM(surge)
500 mA
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
357
2.9
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
350 °C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
500
4.0
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
250 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
www.onsemi.com
6 1
SOT−563
CASE 463A
PLASTIC
1
2
3
6
5
4
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
A6 MG
G
Device Package Shipping
†
ORDERING INFORMATION
BAS16DXV6T1G SOT−563
(Pb−Free)
4000 / Tape &
Reel
34
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SBAS16DXV6T1G SOT−563
(Pb−Free)
4000 / Tape &
Reel
BAS16DXV6
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
−
−
−
−
715
855
1000
1250
mV
Reverse Current
(V
R
= 100 V)
(V
R
= 75 V, T
J
= 150°C)
(V
R
= 25 V, T
J
= 150°C)
I
R
−
−
−
1.0
50
30
mA
Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0 pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 50 W) (Figure 1)
t
rr
− 6.0 ns
Stored Charge
(I
F
= 10 mA to V
R
= 6.0 V, R
L
= 500 W) (Figure 2)
QS − 45 PC
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns) (Figure 3)
V
FR
− 1.75 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BAS16DXV6
www.onsemi.com
3
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
V
F
1 ns MAX
90%
10%
t
100 ns
t
if
t
rr
I
rr
500 W
DUT
50 W
DUTY CYCLE = 2%
V
f
90%
10%
20 ns MAX
t
400 ns
V
C
V
CM
t
V
CM
+
Qa
C
500 W
DUT BAW62
D1 243 pF
100 KW
DUTY CYCLE = 2%
V
120 ns
t
2 ns MAX
10%
90%
V
V
fr
1 KW 450 W
50 W
DUT
DUTY CYCLE = 2%
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
P1-P3P4-P5

SBAS16DXV6T1G

Mfr. #:
Buy SBAS16DXV6T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SOT563 DUAL SWCH DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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