2003 Aug 04 3
Philips Semiconductors Product specification
Schottky barrier diode 1PS74SB23
ELECTRICAL CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-74 (SOT457) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage I
F
= 100 mA 260 300 mV
I
F
= 1 A 400 450 mV
I
R
reverse current V
R
= 20 V; note 1; see Fig.3 80 500 µA
V
R
= 25 V; note 1; see Fig.3 − 1mA
C
d
diode capacitance f = 1 MHz; V
R
= 4 V; see Fig.4 100 − pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W