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NCP458RFCT2G

P1-P3P4-P6P7-P9P10-P12P13-P13
NCP458R, NCP459
http://onsemi.com
4
MAXIMUM RATINGS
Rating Symbol Value Unit
IN, OUT, EN, VBIAS, GATE Pins: (Note 1) V
EN,
V
IN
,
V
OUT,
V
BIAS,
V
GATE
−0.3 to +6.5 V
From IN to OUT Pins: Input/Output (Note 1) NCP459 V
IN
,
V
OUT
0 to + 6.5 V
From IN to OUT Pins: Input/Output (Note 1) NCP458R V
IN
,
V
OUT
±6.5 V
Human Body Model (HBM) ESD Rating are (Note 2) ESD HBM 2000 V
Machine Model (MM) ESD Rating are (Note 2) ESD MM 200 V
Latch−up protection (Note 3)
− Pins IN, OUT, EN, VBIAS and GATE
LU 100 mA
Maximum Junction Temperature T
J
−40 to + 125 °C
Storage Temperature Range T
STG
−40 to + 150 °C
Moisture Sensitivity (Note 4) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. According to JEDEC standard JESD22−A108.
2. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) ±2.0 kV per JEDEC standard:
JESD22−A114 for all pins.
Machine Model (MM) ±250 V per JEDEC standard: JESD22−A115 for all pins.
3. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78 class II.
4. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.
OPERATING CONDITIONS
Symbol Parameter Conditions Min Typ Max Unit
V
IN
Operational Power Supply 0.75 5.5 V
V
EN
Enable Voltage 0 5.5 V
V
BIAS
Bias voltage (V
BIAS
≥ best of V
IN,
V
OUT
) 1.2 5.5 V
T
A
Ambient Temperature Range − 40 25 + 85 °C
C
IN
Decoupling input capacitor 100 nF
C
OUT
Decoupling output capacitor 100 nF
R
q
JA
Thermal Resistance Junction to Air CSP8 (Note 5) 90 °C/W
I
OUT
DC current 4 4.5 A
AC current 1 ms @ 217 Hz 5 A
AC current 100 ms spike
15 A
P
D
Power Dissipation Rating (Note 6) 0.315 W
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. The R
q
JA
is dependent of the PCB heat dissipation and thermal via.
6. The maximum power dissipation (
PD
) is given by the following formula:
P
D
+
T
JMAX
* T
A
R
qJA
NCP458R, NCP459
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T
A
between −40°C to +85°C for V
IN
between 0.75 V and 5.5 V,
and V
BIAS
between 1.2 V and 5.5 V (Unless otherwise noted). Typical values are referenced to T
A
= + 25°C, V
IN
= 3.3 V and
V
BIAS
= 5 V (Unless otherwise noted).
Symbol
Parameter Conditions Min Typ Max Unit
POWER SWITCH
R
DS(on)
Static drain−source
on−state resistance
for each rail
V
IN
= V
BIAS
= 5.5 V
T
A
= 25°C 11 20
mW
T
J
= 125°C 24
V
IN
= V
BIAS
= 3.3 V
T
A
= 25°C 11 20
T
J
= 125°C 24
V
IN
= V
BIAS
= 1.8 V
T
A
= 25°C 12 20
T
J
= 125°C 24
V
IN
= V
BIAS
= 1.5 V
T
A
= 25°C 13 20
T
J
= 125°C 24
V
IN
= V
BIAS
= 1.2 V
T
A
= 25°C 13 20
T
J
= 125°C 24
V
IN
= 1.0 V
V
BIAS
= 1.2 V
T
A
= 25°C 14 24
T
J
= 125°C 30
V
IN
= 0.8 V
V
BIAS
= 1.2 V
T
A
= 25°C 17 30
T
J
= 125°C 35
R
DIS
Output discharge
path
EN = low, NCP459 230 300
W
TIMINGS
T
R
Output rise time
From 10% to 90% of
V
OUT
V
IN
= 5 V
C
LOAD
= 1 mF,
R
LOAD
= 25 W
No cap on GATE pin 0.26
ms
Gate capacitor = 1 nF 1.5
Gate capacitor = 10 nF 15
T
en
Enable time From En
V
ih
to 10% of V
OUT
Without Cgate 10
ms
With 1 nF on Gate 60
ms
T
F
Fall Time. From 90%
to 10% of V
OUT
50
ms
Tdis Disable time From EN to 90% Vout 75
ms
T
R
Output rise time
From 10% to 90% of
V
OUT
V
IN
= 3.3 V
C
LOAD
= 1 mF,
R
LOAD
= 25 W
No cap on GATE pin
0.25 0.5
ms
Gate capacitor = 1 nF 1
Gate capacitor = 10 nF 10
T
en
Enable time
From En V
ih
to 10%
of V
OUT
Without Cgate, NCP459 20 50
ms
Without Cgate, NCP458R 90 150
ms
With 1 nF on Gate 114
ms
T
F
Output fall time
From 90% to 10% of
V
OUT
60 120
ms
T
R
Output rise time From
10% to 90% of V
OUT
V
IN
= 1.8 V
C
LOAD
= 1 mF,
R
LOAD
= 25 W
No cap on GATE pin 0.12
ms
Gate capacitor = 1 nF 0.6
Gate capacitor = 10 nF 5.5
T
en
Enable time From En
V
ih
to 10% of V
OUT
Without Cgate 15
ms
With 1 nF on Gate 85
ms
T
F
Output fall time From
90% to 10% of V
OUT
35
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Parameters are guaranteed for C
LOAD
and R
LOAD
connected to the OUT pin with respect to the ground
NCP458R, NCP459
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T
A
between −40°C to +85°C for V
IN
between 0.75 V and 5.5 V,
and V
BIAS
between 1.2 V and 5.5 V (Unless otherwise noted). Typical values are referenced to T
A
= + 25°C, V
IN
= 3.3 V and
V
BIAS
= 5 V (Unless otherwise noted).
Symbol UnitMaxTypMinConditionsParameter
TIMINGS
T
R
Output rise time
From 10% to 90% of
V
OUT
V
IN
= 1 V
C
LOAD
= 1 mF,
R
LOAD
= 25 W
No cap on GATE pin 0.01
ms
Gate capacitor = 1 nF 1
Gate capacitor = 10 nF 13
T
en
Enable time From En
V
ih
to 10% of V
OUT
V
IN
= 1 V
C
LOAD
= 1 mF,
R
LOAD
= 25 W
Without Cgate 10
ms
With 1 nF on Gate
0.4
ms
T
F
Output fall time 20
ms
Logic
V
IH
High−level input
voltage
0.9 V
V
IL
Low−level input
voltage
0.4
V
R
EN
Pull down resistor 3 7
MW
REVERSE CURRENT BLOCKING
V
rev_thr
Reverse threshold V
OUT
− V
IN
45 mV
V
rev_hyst
Reverse threshold
hysteresis
60 mV
T
rev
Reverse comparator
response time
V
OUT
− Vin > V
rev_thr
2.5
ms
QUIESCENT CURRENT− NCP458R
I
VBIAS
V
BIAS
Quiescent
current
V
BIAS
= 3.3 V, EN = high 1.5 6
mA
I
INQ
IN Quiescent current EN = high 0.01 0.3
mA
I
STBIN
Standby current IN
EN = low, IN standby current, V
IN
= 3.3 V, without
discharge path.
0.01 0.3
mA
I
STDVbias
Standby current
V
BIAS
V
BIAS
= 3.3 V EN = low 0.4 1.5
mA
I
out_leak
Output leakage
current
IN connected to GND, V
OUT
= 5 V 0.01 0.5
mA
QUIESCENT CURRENT − NCP459
I
VBIAS
V
BIAS
Quiescent
current
V
BIAS
= 3.3 V, EN = high 1.3 5
mA
I
INQ
IN Quiescent current EN = high 0.01 0.3
mA
I
STBIN
Standby current IN
EN = low, IN standby current, V
IN
= 3.3 V, with
discharge path. NCP459.
0.01 0.3
mA
I
STDVbias
Standby current
V
BIAS
V
BIAS
= 3.3 V EN = low 0.4 1.5
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Parameters are guaranteed for C
LOAD
and R
LOAD
connected to the OUT pin with respect to the ground
P1-P3P4-P6P7-P9P10-P12P13-P13

NCP458RFCT2G

Mfr. #:
Buy NCP458RFCT2G
Manufacturer:
ON Semiconductor
Description:
Power Switch ICs - Power Distribution 3A SINGLE LOAD SWITCH FOR
Lifecycle:
New from this manufacturer.
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