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NTTFS4939NTAG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 3
1 Publication Order Number:
NTTFS4939N/D
NTTFS4939N
Power MOSFET
30 V, 52 A, Single N−Channel, m8FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Low−Side DC−DC Converters
• Power Load Switch
• Notebook Battery Management
• Motor Control
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
14.3
A
T
A
= 85°C 10.3
Power Dissipation R
q
JA
(Note 1)
T
A
= 25°C P
D
2.21 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
20.3
A
T
A
= 85°C 14.7
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
4.48 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
8.9
A
T
A
= 85°C 6.4
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.85 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
52
A
T
C
= 85°C 38
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
29.8 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
170 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
+150
°C
Source Current (Body Diode) I
S
35 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 31 A
pk
, L = 0.1 mH, R
G
= 25 W)
E
AS
48 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
30 V
5.5 mW @ 10 V
52 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
8.0 mW @ 4.5 V
NTTFS4939NTAG WDFN8
(Pb−Free)
1500/Tape & Reel
(Note: Microdot may be in either location)
1
4939 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
NTTFS4939NTWG WDFN8
(Pb−Free)
5000/Tape & Reel
4939
AYWWG
G
D
D
D
D
S
S
S
G
NTTFS4939N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
4.2
°C/W
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
56.5
Junction−to−Ambient – Steady State (Note 4)
R
q
JA
146.5
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
R
q
JA
28
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm
2
, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
15 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.2 2.2 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V
I
D
= 20 A 4.1 5.5 mW
I
D
= 10 A 4.1
V
GS
= 4.5 V
I
D
= 20 A 6.0 8.0
I
D
= 10 A 5.9
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 15 A 35 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
1979
pF
Output Capacitance C
oss
711
Reverse Transfer Capacitance C
rss
20.2
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 20 A
12.4
nC
Threshold Gate Charge Q
G(TH)
3.2
Gate−to−Source Charge Q
GS
6.0
Gate−to−Drain Charge Q
GD
1.8
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 20 A 28 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
12.2
ns
Rise Time t
r
20.6
Turn−Off Delay Time t
d(off)
20.8
Fall Time t
f
3.9
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTTFS4939N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
8.7
ns
Rise Time t
r
19.5
Turn−Off Delay Time t
d(off)
25.3
Fall Time t
f
3.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C 0.84 1.2
V
T
J
= 125°C 0.71
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 20 A
35.5
ns
Charge Time t
a
19
Discharge Time t
b
16.5
Reverse Recovery Charge Q
RR
28 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.38
nH
Drain Inductance L
D
0.054
Gate Inductance L
G
1.3
Gate Resistance R
G
1.1 2.0
W
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P7

NTTFS4939NTAG

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL
Lifecycle:
New from this manufacturer.
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