DMA90U1800LB
011
0
200
400
600
800
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6 2.0 2.4
0
20
40
60
80
100
10
-3
10
-2
10
-1
10
0
100
150
200
250
300
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 2550751001251501750 10203040
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
0
20
40
60
80
100
I
FSM
[A]
t[s]
t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A]
T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.030 0.0003
2 0.072 0.0045
3 0.092 0.0530
4 0.606 0.0520
5 0.300 0.4000
0.8 x V
RRM
50 Hz
T
VJ
=45°C
V
R
=0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
=25°C
T
VJ
= 150°C
T
VJ
=150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=45°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20130523aData according to IEC 60747and per semiconductor unless otherwise specified
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