IMX4T108 Datasheet EMX4T2R, UMX4NTR, IMX4T108 | P1-P3

EMX4 / UMX4N / IMX4

Transistors

Rev.C 1/3

High transition frequency (dual transistors)

EMX4 / UMX4N / IMX4

zFeatures

1) Two 2SC3837K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f

T=1.5GHz)

3) Low output capacitance. (Cob=0.9pF)

zEquivalent circuits

EMX4 / UMX4N

(3) (2) (1)

(4) (5) (6)

IMX4

(4) (5) (6)

(3) (2) (1)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

Pc

Tj

Tstg

Limits

30

20

3

50

300(TOTAL)

150(TOTAL)

EMX4 / UMX4N

IMX4

150

−55 to +150

Unit

V

mA

mW

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

∗1

∗2

zPackage, marking, and packaging specifications

Type

EMX4

EMT6

X4

T2R

8000

IMX4

SMT6

X4

T108

3000

UMX4N

UMT6

X4

TR

3000

Package

Marking

Code

Basic ordering unit (pieces)

zDimensions (Unit : mm)

UMX4N

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

IMX4

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

ROHM : EMT6

EMX4

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max.

Unit

Conditions

Transition frequency

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

30

20

3

−

56

−

0.5

180

0.5

1.6

V

µA

−

V

MHz

∗

Cob

600 1500

0.95

−

pF

I

C

=10µA

I

C

=1mA

I

E

=10µA

V

CB

=15V

V

EB

=2V

V

CE

/I

E

=10V/ −10mA, f=200MHz

V

CB

/f=10V/1MHz, I

E

=0A

I

C

/I

B

=20mA/4mA

V

CE

/I

C

=10V/10mA

∗Transition frequency of the device.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

−

13

rbb' Cc

6

ps

V

CB

=10V, I

C

=10mA , f=31.8MHz

Collector-base time constant

−

NF

4.5

dB

V

CE

=12V, I

C

=2mA , f=200MHz , Rg=50Ω

Noise factor

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

EMX4 / UMX4N / IMX4

Transistors

Rev.C 2/3

zElectrical characteristic curves

0.1 0.2 0.5 1 2 5 10 20 50

10

COLLECTOR CURRENT : I

C

(mA)

Fig.1 DC current gain vs. collector current

DC CURRENT TRANSFER RATIO :h

FE

100

20

50

200

500

Ta=25

°C

V

CE

=10V

0.1 0.2 0.5 1 2 5 10 20 50

0.1

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

Fig.3 Capacitance vs. reverse bias voltage

OUTPUT CAPACITANCE :C

oB

(pF)

FEEDBACK CAPACITANCE :C

re

(pF)

1.0

0.2

0.5

2.0

5.0

Ta=25

°C

f=1MHz

I

E

=0A

Cob

Cre

−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50

100

EMITTER CURRENT : I

E

(mA)

Fig.4 Gain bandwidth product vs. emitter current

TRANSITION FREQUENCY : f

T

(MHz)

1000

200

500

2000

5000

Ta=25

°C

V

CE

=10V

0.1 0.2 0.5 1 2 5 10

0

FREQUENCY : f (GHz)

Fig.6 Insertion gain vs. frequency

INSERTION GAIN : IS

21el

2

(dB)

5

10

15

20

25

Ta=25

°C

V

CE

=10V

I

C

=10mA

COLLECTOR CURRENT : Ic (mA)

Fig.7 Insertion gain vs. collector current

INSERTION GAIN : IS

21el

2

(dB)

0.5 1 2 5 10 20 50

0

5

10

15

20

25

Ta=25

°C

V

CE

=12V

f=200MHz

02 4 6 81012

0

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.8 Insertion gain vs. collector voltage

INSERTION GAIN : IS

21el

2

(dB)

5

10

15

20

25

30

Ta=25

°C

I

C

=2mA

f=200MHz

0.1 0.2 0.5 1 2 5 10 20 50

0

COLLECTOR CURRENT : I

C

(mA)

Fig.9 Noise factor vs. collector current

NOISE FIGURE : NF(dB)

10

20

Ta=25

°C

V

CE

=12V

f=200MHz

0.1 0.2 0.5 1 2 5 10 20 50

10

COLLECTOR CURRENT : IC (mA)

Fig.2 Collector-emitter saturation voltage

vs. collector current

COLLECTOR SATURATION VOLTAGE :V

CE(sat)

(mV)

100

20

50

200

500

Ta=25

°C

IC/IB=5

0.1 0.2 0.5 1 2 5 10 20 50

1

COLLECTOR CURRENT : I

C

(mA)

Fig.5 Collector to base time constance

vs. collector current

COLLECTOR TO BASE TIME CONSTANT : C

c

rbb' (ps)

10

2

5

20

50

Ta=25

°C

V

CE

=10V

f=31.8MHz

EMX4 / UMX4N / IMX4

Transistors

Rev.C 3/3

024681012

0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Noise factor vs. collector voltage

NOISE FIGURE : NF(dB)

15

5

10

25

20

30

Ta=25

°C

IC=2mA

f=200MHz

IMX4T108

IMX4T108

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