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MJD122-1

P1-P3P4-P6P7-P8
1/8August 2002
MJD122-1 / MJD122T4
MJD127-1 / MJD127T4
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS
■ STMicroelectronics PREFERRED SALESTYPES
■ LOW BASE-DRIVE REQUIREMENTS
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ THROUGH HOLE TO-251 (IPAK)
POWER PACKAGE IN TUBE (SUFFIX “-1”)
■ SURFACE MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
■ ELECTRICALLY SIMILAR TO TIP122 AND
TIP127
APPLICATIONS:
■ GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epitaxial Base technology for cost-effective
performance.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
Ordering
Code
Marking Package Shipment
MJD122T4
MJD122-1
MJD127T4
MJD127-1
MJD122
MJD122
MJD127
MJD127
TO-252 (DPAK)
TO-251 (IPAK)
TO-252 (DPAK)
TO-251 (IPAK)
Tape & Reel
Tube
Tape & Reel
Tube
Symbol Parameter Value Unit
NPN MJD122
PNP MJD127
V
CBO
Collector-Base Voltage (I
E
= 0)
100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100 V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5V
I
C
Collector Current 5 A
I
CM
Collector Peak Current (t
p
< 5 ms)
8A
I
B
Base Current 0.1 A
P
tot
Total Dissipation at T
c
= 25 °C
20 W
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
3
2
1
1
3
TO-252
DPAK
(Suffix ”T4”)
TO-251
IPAK
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 KΩ
R
2
Typ. = 150 Ω
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
j
= 25 °C unless otherwise specified)
* Pulsed: Pulse duration = 300 µs, duty cycle
≤
2 %.
For PNP types voltage and current values are negative.
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
°C/W
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V 10 µA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 50 V 10 µA
I
CEX
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 100 V
V
CE
= 100 V
T
j
= 125 °C
10
500
µA
µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 2 mA
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 30 mA 100 V
V
CE(sat)
* Collector-Emitter
Saturation Voltage
I
C
= 4 A
I
C
= 8 A
I
B
= 16 mA
I
B
= 80 mA
2
4
V
V
V
BE(sat)
* Base-Emitter
Saturation Voltage
I
C
= 8 A I
B
= 80 mA 4.5 V
V
BE(on)
* Base-Emitter On
Voltage
I
C
= 4 A V
CE
= 4 V 2.8 V
h
FE
* DC Current Gain I
C
= 4 A
I
C
= 8 A
V
CE
= 4 V
V
CE
= 4 V
1000
100
12000
3/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Base-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)Collector-Emitter Saturation Voltage (NPN type)
Safe Operating Area Derating Curve
P1-P3P4-P6P7-P8

MJD122-1

Mfr. #:
Buy MJD122-1
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors NPN PWR Darlington Int Anti Collector
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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