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MBR1545CT801HE3/45

P1-P3P4-P5
New Product
MBR(F,B)15H35CT thru MBR(F,B)15H60CT
Vishay General Semiconductor
Document Number: 88782
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
7.5 A x 2
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.55 V, 0.61 V
I
R
50 µA
T
J
max. 175 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR15HxxCT
ITO-220AB
MBRB15HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF15HxxCT
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Max. average forward rectified current
(Fig. 1)
total device
per diode
I
F(AV)
15
7.5
A
Non-repetitive avalanche energy per diode
at 25 °C, I
AS
= 4 A, L = 10 mH
E
AS
80 mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
150 A
Peak repetitive reverse surge current per diode
at t
p
= 2.0 µs, 1 kHz
I
RRM
1.0 0.5 A
Peak non-repetitive reverse energy
(8/20 µs waveform)
E
RSM
20 10 mJ
New Product
MBR(F,B)15H35CT thru MBR(F,B)15H60CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88782
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Note:
(1) Automotive grade AEC Q101 qualified
Electrostatic discharge capacitor voltage human
body model: C = 100 F, R = 1.5 kΩ
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/µs
Operating junction temperature range T
J
- 65 to + 175 °C
Storage temperature range T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
MBR15H35CT
MBR15H45CT
MBR15H50CT
MBR15H60CT
UNIT
TYP. MAX. TYP. MAX.
Maximum instantaneous forward
voltage per diode
(1)
I
F
= 7.5 A
I
F
= 7.5 A
I
F
= 15 A
I
F
= 15 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
F
-
0.50
-
0.61
0.63
0.55
0.75
0.66
-
0.58
-
0.68
0.73
0.61
0.87
0.72
V
Maximum reverse current
at rated V
R
per diode
(2)
T
J
= 25 °C
T
J
= 125 °C
I
R
-
3.0
50
10
-
2.0
50
10
µA
mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Maximum thermal resistance per diode R
θJC
3.0 5.0 3.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR15H45CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF15H45CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB15H45CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB15H45CT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB MBR15H45CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB MBRF15H45CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB MBRB15H45CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB MBRB15H45CTHE3/81
(1)
1.35 81 800/reel Tape and reel
New Product
MBR(F,B)15H35CT thru MBR(F,B)15H60CT
Vishay General Semiconductor
Document Number: 88782
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
0
5
10
15
20
25
50
75 100 125 150 175
MBRF
MBR, MBRB
Average Forward Cu
rrent (A)
Case Temperature (°C)
101
100
25
50
75
100
125
150
175
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.01
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1
10
100
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
06040 10080
0.0001
0.001
0.1
0.01
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (mA)
20
10.1 10 100
100
1000
10
1
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1
0.1
1
1
10
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBR1545CT801HE3/45

Mfr. #:
Buy MBR1545CT801HE3/45
Manufacturer:
Vishay
Description:
DIODE SCHOTTKY ARRAY TO220AB
Lifecycle:
New from this manufacturer.
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