OP515A

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue A 02/05
Page 1
NPN Silicon Phototransistors
OP515A, OP515B, OP515C, OP515D
Features:
Variety of sensitivity ranges
Coaxial leaded package style
Small package size for space limited applications
Description:
The OP515 series devices consist of NPN silicon phototransistors in a small hermetic package with an
extended Collector lead. The narrow receiving angle provides excellent on-axis coupling. This device is
100% production tested using infrared light for close correlation with Optek’s GaAs and GaAIAs emitters.
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage (OP505 and OP506 series only) 5.0 V
Storage & Operating Temperature Range -55°C to +125°C
Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 sec. with soldering iron) 260°C
(1)
Power Dissipation 100 mW
(2)
Continuous Collector Current 50 mA
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. Maximum 20 grams force may
be applied to the leads when soldering.
(2) Derate linearly 0.71 mW/° C above 25° C.
Dimensions are in inches (mm)
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue A 02/05
Page 2
NPN Silicon Phototransistors
OP515A, OP515B, OP515C, OP515D
Notes:
(1) E
e(APT)
is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35mm) in diameter and
perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466” (11.84mm). E
e(APT)
is not nec-
essarily uniform within the measured area.
(2) Derating Linearly 0.71 mW/°C above 25°C
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies
less than 10% over the entire lens surface of the phototransistor being tested.
(4) To calculate typical collector dark current in nA, use the formula I
CED
= 10
(0.040T
A
-3.4)
where T
A
is ambient temperature in °C.
Symbol Parameter Min Typ Max Units Test Conditions
I
C(ON)
On-State OP515D
Collector OP515C
Current OP515B
OP515A
0.40
1.00
3.00
6.00
mA V
CE
= 5 V, E
e
= 5.0 mW/cm
2(3)
I
CEO
Collector-Dark Current
100 nA
V
CE
= 10 V, E
e
= 0
(4)
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30 V
I
C
= 100 µA
V
(BR)ECO
Emitter-Collector Breakdown Voltage
5 V
I
E
= 100 µA
V
CE(SAT)
Collector-Emitter OP515
Saturation Voltage
0.40 V I
C
= 400 µA, E
e
= 5.0 mW/cm
2(3)
I
C
/T
Relative I
C
Changes with Temperature
OP505A-D and OP506A-D series
1.00 %/°C
V
CE
= 5 V, E
e
= 1.0 mW/cm
2
I
ECO
Emitter-Reverse Current 100 µA V
EC
= 0.4 V
Collector Current Vs Collector to Emitter Voltage vs Irradiance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VCE - Collector to Emitter Voltage (V)
IC Collector Current (mA)
6 mW/cm2
5 mW/cm2
4 mW/cm2
3 mW/cm2
2 mW/cm2
1 mW/cm2
T
A
= 25°C
λ
= 940 nm
On-State Collector Current Vs Irradiance
y = 0.6364x - 0.1221
R
2
= 0.9992
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 1.0 2.0 3.0 4.0 5.0
Ee -Irradiance -mW/cm
2
I
C (ON)
-State Collector Current -mA
T
A
= 25°C
V
CE
= 5 Volts
λ = 940 nm

OP515A

Mfr. #:
Manufacturer:
Description:
Optical Sensors Phototransistors Photo Transisto
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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