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VEMD8080

P1-P3P4-P6P7-P7
VEMD8080
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 24-Apr-2018
1
Document Number: 84565
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD8080 is a high speed and high sensitive PIN
photodiode with enhanced sensitivity for visible light. It is a
low profile surface-mount device (SMD) including the chip
with a 4.5 mm
2
sensitive area detecting visible and near
infrared radiation.
FEATURES
• Package type: surface-mount
• Package form: top view
• Dimensions (L x W x H in mm): 4.8 x 2.5 x 0.48
• Radiant sensitive area (in mm
2
): 4.5
• 0.48 mm low profile package
• Enhanced sensitivity for visible light
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Wearables
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.1
(nm)
VEMD8080 28 ± 65 350 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD8080 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
20 V
Junction temperature T
j
85 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +85 °C
Soldering temperature According to reflow solder profile Fig. 8 T
sd
260 °C
Thermal resistance junction-to-ambient R
thJA
350 K/W
ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESD
HBM
≥ 2 kV
VEMD8080
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 24-Apr-2018
2
Document Number: 84565
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
-1.21.6V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
20 - - V
Reverse dark current V
R
= 10 V, E = 0 I
ro
-0.210nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
-47-pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
-1740pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
- 320 - mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
--3.0-mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
-32-μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
-0.1-%/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 850 nm, V
R
= 5 V I
ra
23 28 33 μA
E
e
= 0.25 mW/cm
2
, λ = 525 nm, V
R
= 5 V I
ra
3.4 4.4 5.3 μA
Angle of half sensitivity ϕ -± 65-deg
Wavelength of peak sensitivity λ
p
- 850 - nm
Range of spectral bandwidth λ
0.1
- 350 to 1100 - nm
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 830 nm t
r
-70-ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 830 nm t
f
-70-ns
0.1
1
10
100
1000
0 20406080
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
V
R
= 10 V
0.8
0.9
1
1.1
1.2
-40-200 20406080
I
ra rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
E
e
= 1 mW/cm
2
λ = 950 nm
V
R
= 5 V
VEMD8080
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 24-Apr-2018
3
Document Number: 84565
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Sensitivity vs. Angular Displacement
0.1
1
10
100
0.01 0.1 1
I
ra
- Reverse Light Current (μA)
E
e
- Irradiance (mW/cm
2
)
V
R
= 5 V, λ = 950 nm
0
10
20
30
40
50
0.1 1 10 100
C
p
- Capacitance (pF)
V
R
- Reverse Voltage (V)
f = 1 MHz, E = 0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
400 500 600 700 800 900 1000 1100
S(λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
0.4 0.2 00.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
S
r
p
el
- Relative Sensitivity
P1-P3P4-P6P7-P7

VEMD8080

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SENSOR PHOTODIODE 850NM 8SMD
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