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FMMT413TA

P1-P3P4-P6
Issue 3 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
FMMT413
SOT23 NPN silicon planar avalanche transistor
Summary
V
(BR)CES
= 150V, V
(BR)CEO
= 50V, I
USB
= 25A
Description
The FMMT413 is a NPN silicon planar bipolar transistor optimized for
avalanche mode operation. Tight process control and low inductance
packaging combine to produce high current pulses with fast edges, ideal
for laser diode driving.
Features
• Avalanche mode operation
• 50A peak avalanche current
• Low inductance packaging
Applications
• Laser LED drivers
• Fast edge generation
• High speed pulse generators
Ordering information
Device marking
413
Device Reel size
(inches)
Tape width
(mm)
Quantity per
reel
FMMT413TD 7 8 500
FMMT413TA 7 8 3,000
C
E
B
C
E
B
Pinout - top view
FMMT413
Issue 3 - March 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage BV
CBO
150 V
Collector-emitter voltage BV
CEO
50 V
Emitter-base voltage BV
EBO
6V
Peak pulse current (25ns Pulse Width) I
CM
50 A
Continuous collector current I
C
100 mA
Power dissipation at T
amb
=25°C
Linear derating factor
P
D
330 mW
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
R
⍜JA
378 °C/W
FMMT413
Issue 3 - March 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV
CBO
150 V
Collector-emitter
breakdown voltage
BV
CES
150 V I
C
= 100␮A
Collector-emitter
breakdown voltage
BV
CEO
50 V I
C
= 10mA
Emitter-base breakdown
voltage
BV
EBO
6VI
E
= 100␮A
Collector cut-off current I
CBO
100 nA V
CB
= 120V
Emitter cut-off current I
EBO
100 nA V
EB
= 4V
Collector-emitter saturation
voltage
V
CE(sat)
150 mV I
C
= 10mA,
I
B
= 1mA
Base-emitter saturation
voltage
V
BE(sat)
800 mV I
C
= 10mA,
I
B
= 1mA
Current in second
breakdown (pulsed)
I
USB
22 A
V
C
=110V, C
CE
=4.7nF
(*)
NOTES:
(*) Measured with a circuit possessing an approximate loop inductance of 12nH.
25 A
V
C
=130V, C
CE
=4.7nF
(*)
Static forward current
transfer ratio
h
FE
50 I
C
= 10mA,
V
CE
= 10V
Collector-emitter
inductance
L
ce
2.5 nH Standard SOT23
leads
Transition frequency f
T
150 MHz I
C
= 10mA, V
CE
= 5V,
f = 20MHz
Output capacitance C
OBO
2pFV
CB
= 10V, I
E
= 0,
f = 1MHz
P1-P3P4-P6

FMMT413TA

Mfr. #:
Buy FMMT413TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN Avalanche
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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