MII300-12E4

© 2006 IXYS All rights reserved
1 - 2
0645
MII 300-12 E4
IXYS reserves the right to change limits, test conditions and dimensions.
I
C25
= 280 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
IGBT Module
phaseleg
Features
NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance in resonant circuits
HiPerFRED
TM
diodes
- fast and soft reverse recovery
- low operating forward voltage
- low leakage current
Package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- kelvin emitter terminal for easy drive
- isolated ceramic base plate
Applications
dr
ives
- AC
- DC
power supplies
- rectifiers with power factor correction
and recuperation capability
- UPS
Preliminary data
IGBTs T1 - T2
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 125°C 1200 V
V
GES
±
20 V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
280
200
A
A
I
CM
V
CEK
V
GE
=
±
1
5 V; R
G
= 7.5 ; T
VJ
= 125°C
RBSOA Clamped inductive load; L = 100 µH
300
V
CES
A
t
SC
(SCSOA)
V
CE
= 900 V; V
GE
=
±
1
5 V; R
G
= 7.5
T
VJ
= 125°C; non-repetitive
10 µs
P
tot
T
C
= 25°C 1100 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 200 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
2.2
2.6
2.8 V
V
V
GE(th)
I
C
= 6 mA; V
GE
= V
CE
4.5 5.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.8
3.5
3.3 mA
mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 400 nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 200 A
V
GE
=
±
1
5 V; R
G
= 7.5
170
60
680
50
29
20
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 200 A
11
1.16
nF
µC
R
thJC
R
thJH
(per IGBT)
with heatsink compound 0.22
0.11 K/W
K/W
9
8
2
3
1
T
1
11
1
0
T2
D
1
D2
p h a s e - o u t
© 2006 IXYS All rights reserved
2 - 2
0645
MII 300-12 E4
IXYS reserves the right to change limits, test conditions and dimensions.
Free wheeling diodes D1 - D2
Symbol Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25°C
T
C
= 80°C
300
190
A
A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 200 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
2.3
1.7
2.7 V
V
I
RM
t
rr
I
F
= 150 A; di
F
/dt = 1500 A/µs;
V
R
= 600 V; V
GE
= 0 V; T
VJ
= 125°C
160
220
A
ns
R
thJC
R
thJH
(per IGBT)
with heatsink compound 0.45
0.23 K/W
K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
operating -40...+150
-40...+125
°C
°C
V
ISO
I
ISOL
< 1 mA; 50/60 Hz 4000 V~
M
d
Mounting torque (module, M6)
(terminal, M6)
2.25 - 2.75
4.5 - 5.5
Nm
Nm
Symbol Conditions Characteristic Values
min. typ. max.
d
S
d
A
Creepage distance on surface
Strike distance in air
2
2
mm
mm
Weight
250 g
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.0 V; R
0
= 8 mW
Free Wheeling Diode D1-D2 (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 2 mW
Thermal Response
IGBT (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Free Wheeling Diode D1-D2 (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Optional accessories for modules
keyed twin plugs
(UL758, style
1385, CSA class 5851,
guide 460-1-1)
Type ZY180L with wire length 350mm
– for pins 4 (yellow wire) and 5 (red wire)
– for pins 11 (yellow wire) and 10 (red wire)
Type ZY180R with wire length 350mm
– for pins 7 (yellow wire) and 6 (red wire)
– for pins 8 (yellow wire) and 9 (red wire)
I
V
0
R
0
P
V
T
J
R
th1
R
th2
C
th2
C
th1
T
C
p h a s e - o u t

MII300-12E4

Mfr. #:
Manufacturer:
Description:
MOD IGBT NPT PHASE LEG Y3-LI
Lifecycle:
New from this manufacturer.
Delivery:
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