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DMP3065LVT-7

P1-P3P4-P6
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
1 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMP3065LVT
ADVANCE INFO R MA T I O N
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
-30V
42mΩ @ V
GS
= -10V
65mΩ @ V
GS
= -4.5V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP3065LVT-7
TSOT26
3,000/Tape & Reel
DMP3065LVT-13
TSOT26
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
2018
Code
Y
Z
A
B
C
D
E
F
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Top View
Internal Schematic
ESD PROTECTED
TSOT26
1
2
3
6
5
4
D D
D D
G S
Equivalent Circuit
65P = Product Type Marking Code
YM = Date Code Marking
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
e3
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMP3065LVT
ADVANCE INFO R MA T I O N
Maximum Ratings P-Channel (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.1
-4.2
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.0
-3.2
A
Maximum Body Diode Continuous Current
I
S
-2.0
A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
P
D
1.2
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
102
°C/W
Total Power Dissipation (Note 5)
P
D
1.6
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
78
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics P-Channel (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
—
—
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
J
= +25°C
I
DSS
—
—
-1
μA
V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±10
μA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1
-1.7
-2.1
V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
34
42
mΩ
V
GS
= -10V, I
D
= -4.9A
—
52
65
V
GS
= -4.5V, I
D
= -3.7A
Forward Transfer Admittance
|Y
fs
|
—
8.5
—
S
V
DS
= -5V, I
D
= -4.9A
Diode Forward Voltage
V
SD
—
-0.75
-1.2
V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
587
880
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
160
240
Reverse Transfer Capacitance
C
rss
—
84
130
Total Gate Charge (V
GS
= -4.5V)
Q
g
—
6.3
10
nC
V
DS
= -15V, I
D
= -4.9A
Total Gate Charge (V
GS
= -10V)
Q
g
—
12.3
20
Gate-Source Charge
Q
gs
—
1.9
4
Gate-Drain Charge
Q
gd
—
2.5
5
Turn-On Delay Time
t
D(on)
—
5.7
10
ns
V
DD
= -15V, V
GS
= -10V,
I
D
= -4.9A, R
G
= 6Ω
Turn-On Rise Time
t
r
—
11.8
22
Turn-Off Delay Time
t
D(off)
—
21.8
35
Turn-Off Fall Time
t
f
—
23.9
40
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
3 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMP3065LVT
ADVANCE INFO R MA T I O N
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
0 1 2 3 4 5
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
V = -2.5V
GS
V = -3.5V
GS
V = -4.0V
GS
V = -4.5V
GS
V = -10V
GS
V = -3.0V
GS
0
2
4
6
8
10
12
14
16
18
20
0 1 2 3 4 5
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , DRAIN CURRENT (A)
D
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
V = -5.0V
DS
0
0.02
0.04
0.06
0.08
0.1
0 2 4 6 8 10 12 14 16 18 20
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -4.5V
GS
V = -10V
GS
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 2 4 6 8 10 12 14 16 18 20
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I = -3.7A
D
I = -4.9A
D
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
2 4 6 8 10 12 14 16 18 20
-I , DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = -4.5V
I = -3.7A
GS
D
V = -10V
I = -4.9A
GS
D
P1-P3P4-P6

DMP3065LVT-7

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MOSFET 30V P-Ch Enh Mode 20Vgss 587pF 12.3nC
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