AOTF2916L

AOT2916L/AOTF2916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 3 6 9 12 15
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 20 40 60 80 100
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
50
100
150
200
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
C
oss
C
rss
V
DS
=50V
I
D
=10A
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT2916L (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
40
for AOT2916L (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2916L (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Area for AOT2916L (Note F)
R
θJC
=3.6°C/W
Rev 0 : Oct. 2012 www.aosmd.com Page 4 of 7
AOT2916L/AOTF2916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.6 2.15
17
5
2
10
0
18
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area for AOTF2916L
10
µ
s
10ms
1ms
DC
R
DS(ON)
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
0
50
100
150
200
250
300
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOTF2916L (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
R
θJC
=6.4°C/W
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2916L (Note F)
Rev 0 : Oct. 2012 www.aosmd.com Page 5 of 7
AOT2916L/AOTF2916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.6 2.15
17
5
2
10
0
18
0
10
20
30
40
50
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(°
°°
°C)
Figure 12: Power De-rating (Note F)
0
5
10
15
20
25
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(°
°°
°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
0.001 0.1 10 1000
Power (W)
Pulse Width (s)
T
A
=25°C
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
R
θJA
=60°C/W
Rev 0 : Oct. 2012 www.aosmd.com Page 6 of 7

AOTF2916L

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 100V 5A TO220F
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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