IRLML0030TRPBF Datasheet IRLML0030TRPBF | P1-P3

02/29/12

IRLML0030TRPbF

HEXFET

®

Power MOSFET

www.irf.com 1

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes  through

 are on page 10

Application(s)

Micro3

TM

(SOT-23)

IRLML0030TRPbF

D

S

G

3

1

2

• Load/ System Switch

Features and Benefits

Features

Benefits

V

DS

30 V

V

GS Max

± 20 V

R

DS(on) max

(@V

GS

= 10V)

27

m

Ω

R

DS(on) max

(@V

GS

= 4.5V)

40

m

Ω

Low R

DS(on)

(

≤

27m

Ω

)

Lower switching losses

Industry-standard pinout Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

results in Easier manufacturing

RoHS compliant containing no lead, no bromide and no halogen

⇒

Environmentally friendly

MSL1, Industrial qualification Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Units

V

DS

Drain-Source Voltage

V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Maximum Power Dissipation

P

D

@T

A

= 70°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

T

J,

T

STG

Junction and Storage Temperature Range °C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R

θJA

Junction-to-Ambient

––– 100

R

θJA

Junction-to-Ambient (t<10s)

––– 99

Max.

5.3

4.3

-55 to + 150

± 20

0.01

30

1.3

0.8

21

W

°C/W

A

PD - 96278B

IRLML0030TRPbF

2 www.irf.com

D

S

G

Electric Characteristics @ T

J

= 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V

Δ

V

(BR)DSS

/

Δ

T

J

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

––– 33 40

––– 22 27

V

GS(th)

Gate Threshold Voltage 1.3 1.7 2.3 V

I

DSS

––– ––– 1

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

R

G

Internal Gate Resistance ––– 2.3 –––

Ω

gfs Forward Transconductance 9.5 ––– ––– S

Q

g

Total Gate Charge ––– 2.6 –––

Q

gs

Gate-to-Source Charge ––– 0.8 –––

Q

gd

Gate-to-Drain ("Miller") Charge ––– 1.1 –––

t

d(on)

Turn-On Delay Time ––– 5.2 –––

t

r

Rise Time ––– 4.4 –––

t

d(off)

Turn-Off Delay Time ––– 7.4 –––

t

f

Fall Time ––– 4.4 –––

C

iss

Input Capacitance ––– 382 –––

C

oss

Output Capacitance ––– 84 –––

C

rss

Reverse Transfer Capacitance ––– 39 –––

Source - Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.0 V

t

rr

Reverse Recovery Time ––– 11 17 ns

Q

rr

Reverse Recovery Charge ––– 4.0 6.0 nC

––– –––

pF

A

1.6

21

V

DD

=15V

nA

nC

ns

V

DS

= V

GS

, I

D

= 25μA

V

DS

=24V, V

GS

= 0V

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

R

DS(on)

V

GS

= 10V, I

D

=

5.2A

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current μA

m

Ω

Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 1mA

V

GS

= 4.5V, I

D

=

4.2A

MOSFET symbol

showing the

V

DS

=15V

Conditions

V

GS

= 4.5V

V

GS

= 0V

V

DS

= 15V

ƒ = 1.0MHz

R

G

= 6.8Ω

V

GS

= 4.5V

di/dt = 100A/μs

V

GS

= 20V

V

GS

= -20V

T

J

= 25°C, I

S

= 1.6A, V

GS

= 0V

integral reverse

p-n junction diode.

V

DS

= 10V, I

D

= 5.2A

I

D

= 5.2A

I

D

= 1.0A

T

J

= 25°C, V

R

= 15V, I

F

=1.6A

IRLML0030TRPbF

www.irf.com 3

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

1.5 2.0 2.5 3.0 3.5 4.0

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V

≤

60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 5.2A

V

GS

= 10V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10.0V

8.00V

4.50V

3.50V

3.25V

3.00V

2.50V

BOTTOM 2.25V

≤

60μs PULSE WIDTH Tj = 25°C

2.25V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.25V

≤

60μs PULSE WIDTH

Tj = 150°C

VGS

TOP 10.0V

8.00V

4.50V

3.50V

3.25V

3.00V

2.50V

BOTTOM 2.25V

IRLML0030TRPBF

IRLML0030TRPBF

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