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BGU8309Z

P1-P3P4-P6P7-P9P10-P12P13-P13
BGU8309 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 4 of 13
NXP Semiconductors
BGU8309
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and
COMPASS
9. Limiting values
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 3.
[2] Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed V
CC
+ 0.6 V or 5.0 V.
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.
10. Recommended operating conditions
11. Thermal characteristics
[1] Simulated using finite element method resembling device on NXP application board.
[2] Measured with device mounted on NXP application board.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
See
Section 18.3 “Disclaimers”, paragraph “Limiting values”.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage
[1]
0.5 +5.0 V
V
I(ENABLE)
input voltage on pin ENABLE V
I(ENABLE)
< V
CC
+ 0.6 V
[1][2]
0.5 +5.0 V
V
I(RF_IN)
input voltage on pin RF_IN DC; V
I(RF_IN)
< V
CC
+ 0.6 V
[1][2][3]
0.5 +5.0 V
V
I(RF_OUT)
input voltage on pin RF_OUT DC; V
I(RF_OUT)
< V
CC
+ 0.6 V
[1][2][3]
0.5 +5.0 V
P
i
input power
[1]
- 10 dBm
P
tot
total power dissipation T
sp
130 C - 55 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM) according to
JEDEC standard JS-001-2010
- 2kV
Charged Device Model (CDM) according to
JEDEC standard JESD22-C101C
- 1kV
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.5 - 3.1 V
T
amb
ambient temperature 40 +25 +85 C
V
I(ENABLE)
input voltage on pin ENABLE OFF state - - 0.3 V
ON state 0.8 - - V
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-bop)
thermal resistance from junction to bottom of
package
in free air
[1]
192 K/W
R
th(j-pcb)
thermal resistance from junction to printed-circuit
board
in free air
[2]
330 K/W
j-pcb
thermal characterization parameter from junction to
printed-circuit board
in free air
[2]
177 K/W
BGU8309 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 5 of 13
NXP Semiconductors
BGU8309
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and
COMPASS
12. Characteristics
[1] PCB losses are subtracted.
[2] Guaranteed by device design, but not tested in production.
[3] Including PCB losses.
[4] f
1
= 1713 MHz; f
2
= 1851 MHz; P
i
= 20 dBm at f
1
; P
i
= 65 dBm at f
2
.
Table 8. Characteristics at V
CC
= 1.8 V
f = 1575 MHz; V
I(ENABLE)
0.8 V; P
i
< 40 dBm; T
amb
= 25 C; input matched to 50 using a 6.8 nH inductor, see Figure 3,
unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current V
I(ENABLE)
0.8 V
P
i
< 40 dBm 1.6 3.6 5.6 mA
P
i
= 20 dBm - 4.6 - mA
V
I(ENABLE)
0.3 V - - 1 A
G
p
power gain no jammer 15 17 19 dB
P
jam
= 20 dBm; f
jam
= 850 MHz - 17 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz - 17 - dB
RL
in
input return loss P
i
< 40 dBm - 12 - dB
P
i
= 20 dBm - 12 - dB
RL
out
output return loss P
i
< 40 dBm - 10 - dB
P
i
= 20 dBm - 10 - dB
ISL isolation -22-dB
NF noise figure P
i
= 40 dBm; no jammer
[1][2]
- 0.7 1.25 dB
P
i
= 40 dBm; no jammer
[2][3]
- 0.8 1.35 dB
P
jam
= 20 dBm; f
jam
= 850 MHz
[3]
- 1.0 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz
[3]
- 1.4 - dB
P
i(1dB)
input power at 1 dB
gain compression
[2]
14 9 - dBm
IP3
i
input third-order intercept point
[2][4]
1 5 - dBm
IMD3 third-order intermodulation
distortion
input
[4]
- 98 - dBm
K Rollett stability factor - 1- -
t
on
turn-on time time from V
I(ENABLE)
ON to 90 % of the gain - - 2 s
t
off
turn-off time time from V
I(ENABLE)
OFF
to 10 % of the gain
--1s
Table 9. Characteristics at V
CC
= 2.85 V
f = 1575 MHz; V
I(ENABLE)
0.8 V; P
i
< 40 dBm; T
amb
= 25 C; input matched to 50 using a 6.8 nH inductor, see Figure 3;
unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current V
I(ENABLE)
0.8 V
P
i
< 40 dBm 1.6 3.6 5.6 mA
P
i
= 20 dBm - 4.6 - mA
V
I(ENABLE)
0.3 V - - 1 A
BGU8309 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 6 of 13
NXP Semiconductors
BGU8309
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and
COMPASS
[1] PCB losses are subtracted.
[2] Guaranteed by device design, but not tested in production.
[3] Including PCB losses.
[4] f
1
= 1713 MHz; f
2
= 1851 MHz; P
i
= 20 dBm at f
1
; P
i
= 65 dBm at f
2
.
G
p
power gain no jammer 15 17 19 dB
P
jam
= 20 dBm; f
jam
= 850 MHz - 17 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz - 17 - dB
RL
in
input return loss P
i
< 40 dBm - 12 - dB
P
i
= 20 dBm - 12 - dB
RL
out
output return loss P
i
< 40 dBm - 10 - dB
P
i
= 20 dBm - 10 - dB
ISL isolation -22-dB
NF noise figure P
i
= 40 dBm; no jammer
[1][2]
- 0.7 1.25 dB
P
i
= 40 dBm; no jammer
[2][3]
- 0.8 1.35 dB
P
jam
= 20 dBm; f
jam
= 850 MHz
[3]
- 1.0 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz
[3]
- 1.4 - dB
P
i(1dB)
input power at 1 dB
gain compression
[2]
14 9 - dBm
IP3
i
input third-order intercept point
[2][4]
1 5 - dBm
IMD3 third-order intermodulation
distortion
input
[4]
- 98 - dBm
K Rollett stability factor - 1- -
t
on
turn-on time time from V
I(ENABLE)
ON,
to 90 % of the gain
--2s
t
off
turn-off time time from V
I(ENABLE)
OFF,
to 10 % of the gain
--1s
Table 9. Characteristics at V
CC
= 2.85 V …continued
f = 1575 MHz; V
I(ENABLE)
0.8 V; P
i
< 40 dBm; T
amb
= 25 C; input matched to 50 using a 6.8 nH inductor, see Figure 3;
unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P13

BGU8309Z

Mfr. #:
Buy BGU8309Z
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS
Lifecycle:
New from this manufacturer.
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