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NSPU3061N2T5G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
January, 2018 − Rev. 1
1 Publication Order Number:
NSPU3061/D
NSPU3061
6.3 V Unidirectional ESD
and Surge Protection
Device
The NSPU3061 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, high peak
pulse current handling capability and fast response time provide best
in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, tablets, MP3 players,
digital cameras and many other portable applications where board
space comes at a premium.
Features
• Low Clamping Voltage
• Low Leakage
• Small Body Outline: 1.0 mm x 0.6 mm
• Protection for the Following IEC Standards:
IEC61000−4−2 Level 4: ±30 kV Contact Discharge
IEC61000−4−5 (Lightning): 30 A (8/20 ms)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• USB V
BUS
and CC Line Protection
• Microphone Line Protection
• GPIO Protection
Table 1. MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD)
Contact ±30 kV
Air ±30
Operating Junction Temperature Range T
J
−65 to +
150
°C
Storage Temperature Range T
STG
−65 to +
150
°C
Minimum Peak Pulse Current I
PP
30 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
CATHODE
2
ANODE
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NSPU3061N2T5G X2DFN2
(Pb−Free)
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
X2DFN2
CASE 714AB
MARKING
DIAGRAM
6 = Specific Device Code
M = Date Code
G = Pb−Free Package
6 M
G
NSPU3061
www.onsemi.com
2
Table 2. ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional Surge Protection
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
I/O Pin to GND 6.3 V
Breakdown Voltage V
BR
I
T
= 1 mA, I/O Pin to GND 6.4 6.9 9.5 V
Reverse Leakage Current I
R
V
RWM
= 6.3 V, I/O Pin to GND 0.02 1
mA
Clamping Voltage (Note 1) V
C
IEC61000−4−2, ± 8 kV Contact See Figures 2 & 3 V
Clamping Voltage TLP
(Note 2)
V
C
I
PP
= 8 A IEC61000−4−2 Level 2 Equivalent
(±4 kV Contact, ± 8 kV Air)
6.4
V
I
PP
= 16 A IEC61000−4−2 Level 4 Equivalent
(±8 kV Contact, ± 15 kV Air)
6.6
Reverse Peak Pulse Current I
PP
IEC61000−4−5 (8x20 ms) per Figure 1
30 A
Clamping Voltage 8x20 ms
Waveform per Figure 1
V
C
I
PP
= 20 A
I
PP
= 30 A
6.6
7.3
9.4
10.4
V
Dynamic Resistance R
DYN
100 ns TLP 0.025
W
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz 90 110 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For test procedure see application note AND8307/D
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50 W, t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
TYPICAL CHARACTERISTICS
Figure 1. 8 x 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
NSPU3061
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. ESD Clamping Voltage
Positive 8 kV Contact per IEC61000−4−2
Figure 3. ESD Clamping Voltage
Negative 8 kV Contact per IEC61000−4−2
TIME (ns) TIME (ns)
140100806040200−20
−5
0
10
15
20
30
35
140100806040200−20
−35
−30
−25
−15
−10
−5
5
VOLTAGE (V)
VOLTAGE (V)
5
25
40
−20
0
Figure 4. Positive TLP I−V Curve
I
TLP
(A)
V
CTLP
(V)
18
16
14
12
10
8
6
4
2
0
01234 65
20
7
Figure 5. Negative TLP I−V Curve
I
TLP
(A)
V
CTLP
(V)
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
0−1−2−3−4 −6−5
−20
Figure 6. Positive Clamping Voltage vs. Peak
Pulse Current (t
p
= 8/20 ms)
V
C
@ I
PK
(V)
I
PK
(A)
0353051015 2520
8
6
4
2
0
40 45
9
7
5
3
1
Figure 7. Negative Clamping Voltage vs. Peak
Pulse Current (t
p
= 8/20 ms)
V
C
@ I
PK
(V)
I
PK
(A)
0353051015 2520
8
6
4
2
0
40 45 50
7
5
3
1
120 120
9810
9
8
7
6
5
4
3
2
1
0
10
V
IEC
Eq (kV)
9
8
7
6
5
4
3
2
1
0
10
V
IEC
Eq (kV)
−7 −8
10
P1-P3P4-P6

NSPU3061N2T5G

Mfr. #:
Buy NSPU3061N2T5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors UNI-DIRECTIONAL SURGE PRO
Lifecycle:
New from this manufacturer.
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