BCW31

©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BCW31
Absolute Maximum Ratings * T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Thermal Characteristics
T
A
=25°C unless otherwise noted
Device mounted on FR-4PCB 40mm × 40mm × 1.5mm
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 32 V
V
CBO
Collector-Base Voltage 32 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector current (DC) 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 2.0mA, I
B
= 0 32 V
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10µA, I
B
= 0 32 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
C
= 10µA, I
C
= 0 5.0 V
I
CBO
Collector Cutoff Current V
CB
= 32V, I
E
= 0
V
CB
= 32V, I
E
= 0, T
A
= 100°C
100
10
nA
µA
On Characteristics
h
FE
DC Current Gain I
C
= 2.0mA, V
CE
= 5.0V 110 220
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 0.5mA 0.25 V
V
BE(on)
Base-Emitter On Voltage I
C
= 2.0mA, V
CE
= 5.0V 0.55 0.7 V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product I
C
= 2.0mA, V
CE
= 5.0V
f = 35MHz
200
C
obo
Output Capacitance V
CB
= 10V, I
E
= 0, f = 1.0MHz 4.0 pF
NF Noise Figure I
C
= 0.2mA, V
CE
= 5.0V
R
S
= 2.0k, f = 1.0kHz
B
W
= 200Hz
10 dB
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
BCW31
NPN General Purpose Amplifier
This device is designed for general purpose applications at collector
currents to 300mA.
Sourced from process 10.
1. Base 2. Emitter 3. Collector
1
2
3
SOT-23
Mark: D1
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BCW31
Typical Characteristics
Figure 1. Typical Pulsed Current Gain vs
Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Input and Outtput Capacitance
vs Reverse Voltage
10 20 30 50 100 200 300 500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125
25
- 40
Vce = 5V
°C
°C
°C
1 10 100 400
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
25
- 40
125
β
β β
β
= 10
°
°°
°C
°
°°
°C
°
°°
°C
0.1 1 10 100 300
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
β
β β
β = 10
C
BESAT
25
- 40
125
°
°°
°C
°
°°
°C
°
°°
°C
1 10 100 500
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25
- 40
125
°
°°
°C
°
°°
°C
°
°°
°C
25 50 75 100 125 150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
V = 60V
°
CB
0.1 1 10 100
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pF)
Cib
Cob
f = 1.0 MHz
ce
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BCW31
Typical Characteristics
(Continued)
Figure 7. Switching Times vs
Collector Current
Figure 8. Power Dissipation vs
Ambient Temperature
10 20 30 50 100 200 300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TIME (nS)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
t
s
t
d
t
f
t
r
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23

BCW31

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 32V 0.5A SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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