IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= I
T
Notes 1, 2 35 55 S
C
iss
4800 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1675 pF
C
rss
590 pF
t
d(on)
50 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
,75ns
t
d(off)
I
D
= 0.5 I
D25
, R
G
= 2.5 Ω (External) 95 ns
t
f
31 ns
Q
g(on)
180 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
42 nC
Q
gd
Notes 2 75 nC
R
thJC
0.54 K/W
R
thCK
0.3 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 80 A
I
SM
Repetitive; pulse width limited by T
JM
320 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Note 1
t
rr
200 ns
Q
RM
0.5 µC
I
RM
6A
I
F
= 25A
-di/dt = 100 A/µs,
V
R
= 50 V
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ISOPLUS220 OUTLINE
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. I
T
= 40A
IXFC 80N10
