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BUL1102E

P1-P3P4-P6P7-P9P10-P12P13-P13
February 2012 Doc ID 7929 Rev 5 1/13
13
BUL1102E
High voltage fast-switching
NPN power transistor
Features
■ High voltage capability
■ Very high switching speed
Applications
Four lamp electronic ballast for:
■ 120 V mains in push-pull configuration
■ 277 V mains in half bridge current feed
configuration
Description
This is a high voltage fast switching NPN power
transistor manufactured in multi epitaxial planar
technology. It uses a cellular emitter structure with
planar edge termination to enhance switching
speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during breakdown condition, without using
the Transil™ protection usually necessary in
typical converters for lamp ballast.
Figure 1. Internal schematic diagram
TO-220FP
1
2
3
1
2
3
TA B
TO-220
C
(2, TAB)
(1)
B
E
(3)
Table 1. Device summary
Order codes Marking Package Packaging
BUL1102E BUL1102E TO-220 Tube
BUL1102EFP BUL1102EFP TO-220FP Tube
www.st.com
Absolute maximum ratings BUL1102E
2/13 Doc ID 7929 Rev 5
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 1100 V
V
CEO
Collector-emitter voltage (I
B
= 0) 450 V
V
EBO
Emitter-base voltage (I
C
= 0) 12 V
I
C
Collector current 4 A
I
CM
Collector peak current (t
P
< 5 ms) 8 A
I
B
Base current 2 A
I
BM
Base peak current (t
P
< 5 ms) 4 A
P
TOT
BUL1102E total dissipation at T
C
= 25°C
BUL1102EFP total dissipation at T
C
= 25 °C
70
30
W
V
ISO
BUL1102EFP insolation withstand voltage (RMS) from
all three leads to external heatsink
1500 V
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
BUL1203E thermal resistance junction-case 1.8 °C/W
BUL1203EFP thermal resistance junction-case 4.2 °C/W
BUL1102E Electrical characteristics
Doc ID 7929 Rev 5 3/13
2 Electrical characteristics
(T
J
= 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off
current (V
BE
= 0)
V
CE
=1100 V 100 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 12 V 1 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage
(I
B
=0)
I
C
= 100 mA 450 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 2 A I
B
=400 mA 1.5 V
V
BE(sat)
(1)
Base-emitter
saturation voltage
I
C
= 2 A _ I
B
= 400 mA 1.5 V
h
FE
(1)
DC current gain
I
C
= 250 mA_ V
CE
= 5 V
I
C
= 2 A, V
CE
= 5 V
for BUL1102E
I
C
= 2 A_ V
CE
= 5 V
for BUL1102EFP
35
12
12
70
20
23
t
s
t
f
Resistive load
Storage time
Fall time
I
C
= 2.5 A V
CC
= 250 V
I
B1
= 0.5 A I
B2
= 1 A
T
P
=30 µs (see Figure 14)
2.5
300
µs
ns
E
ar
Avalanche energy
L = 2 mH C = 1.8 nF
I
BR
≤ 2.5 A 25 °C < T
C
<125 °C
(see Figure 12)
6mJ
P1-P3P4-P6P7-P9P10-P12P13-P13

BUL1102E

Mfr. #:
Buy BUL1102E
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High voltage fast switching NPN power transistor
Lifecycle:
New from this manufacturer.
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