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AD8021ARMZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
AD8021
Rev. F | Page 5 of 28
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing −10.2 to +9.8 −10.6 to +10.2 V
Linear Output Current 70 mA
Short-Circuit Current 115 mA
Capacitive Load Drive for 30% Overshoot V
O
= 50 mV p-p/1 V p-p 15/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB
Turn-On Time V
O
= 0 V to 2 V, 50% logic to 50% output 45 ns
Turn-Off Time V
O
= 0 V to 2 V, 50% logic to 50% output 50 ns
DISABLE Voltage—Off/On
V
DISABLE
− V
LOGIC REFERENCE
1.80/1.95 V
Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
DISABLE = 4.0 V
2 μA
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
DISABLE = 0.4 V
33 μA
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V
Quiescent Current Output enabled 7.8 8.6 mA
Output disabled 1.7 2.0 mA
+Power Supply Rejection Ratio V
CC
= 11 V to 13 V, V
EE
= −12 V −86 −96 dB
−Power Supply Rejection Ratio V
CC
= 12 V, V
EE
= −13 V to −11 V −86 −100 dB
V
S
= 5 V, @ T
A
= 25°C, R
L
= 1 kΩ, gain = +2, unless otherwise noted.
Table 3.
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, C
C
= 10 pF, V
O
= 0.05 V p-p 270 305 MHz
G = +2, C
C
= 7 pF, V
O
= 0.05 V p-p 155 190 MHz
G = +5, C
C
= 2 pF, V
O
= 0.05 V p-p 135 165 MHz
G = +10, C
C
= 0 pF, V
O
= 0.05 V p-p 95 130 MHz
Slew Rate, 1 V Step G = +1, C
C
= 10 pF 80 110 V/μs
G = +2, C
C
= 7 pF 110 140 V/μs
G = +5, C
C
= 2 pF 210 280 V/μs
G = +10, C
C
= 0 pF 290 390 V/μs
Settling Time to 0.01% V
O
= 1 V step, R
L
= 500 Ω 28 ns
Overload Recovery (50%) 0 V to 2.5 V input step, G = +2 40 ns
DISTORTION/NOISE PERFORMANCE
f = 1 MHz
HD2 V
O
= 2 V p-p −84 dBc
HD3 V
O
= 2 V p-p −91 dBc
f = 5 MHz
HD2 V
O
= 2 V p-p −68 dBc
HD3 V
O
= 2 V p-p −81 dBc
Input Voltage Noise f = 50 kHz 2.1 2.6 nV/√Hz
Input Current Noise f = 50 kHz 2.1 pA/√Hz
AD8021
Rev. F | Page 6 of 28
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DC PERFORMANCE
Input Offset Voltage 0.4 1.0 mV
Input Offset Voltage Drift T
MIN
to T
MAX
0.8 μV/°C
Input Bias Current +Input or −input 7.5 10.3 μA
Input Bias Current Drift 10 nA/°C
Input Offset Current 0.1 0.5 ±μA
Open-Loop Gain 72 76 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ
Common-Mode Input Capacitance 1 pF
Input Common-Mode Voltage Range 0.9 to 4.6 V
Common-Mode Rejection Ratio 1.5 V to 3.5 V −84 −98 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.25 to 3.38 1.10 to 3.60 V
Linear Output Current 30 mA
Short-Circuit Current 50 mA
Capacitive Load Drive for 30% Overshoot V
O
= 50 mV p-p/1 V p-p 10/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB
Turn-On Time V
O
= 0 V to 1 V, 50% logic to 50% output 45 ns
Turn-Off Time V
O
= 0 V to 1 V, 50% logic to 50% output 50 ns
DISABLE Voltage—Off/On
V
DISABLE
− V
LOGIC REFERENCE
1.55/1.70 V
Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
DISABLE = 4.0 V
2 μA
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
DISABLE = 0.4 V
33 μA
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V
Quiescent Current Output enabled 6.7 7.5 mA
Output disabled 1.2 1.5 mA
+Power Supply Rejection Ratio V
CC
= 4.5 V to 5.5 V, V
EE
= 0 V −74 −82 dB
−Power Supply Rejection Ratio V
CC
= 5 V, V
EE
= −0.5 V to +0.5 V −76 −84 dB
AD8021
Rev. F | Page 7 of 28
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 26.4 V
Power Dissipation
Observed power
derating curves
Input Voltage (Common Mode) ±V
S
± 1 V
Differential Input Voltage
1
±0.8 V
Differential Input Current ±10 mA
Output Short-Circuit Duration
Observed power
derating curves
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering, 10 sec) 300°C
1
The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the
input current should be limited to ±10 mA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8021 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit can cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
not be sufficient to guarantee that the maximum junction tem-
perature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves.
AMBIENT TEMPERATURE (°C)
MAXIMUM POWER DISSIPATION (W)
2.0
1.5
1.0
0.5
0.01
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65
75
8
5
8-LEAD SOIC
8-LEAD MSOP
01888-004
Figure 3. Maximum Power Dissipation vs. Temperature
1
1
Specification is for device in free air: 8-lead SOIC: θ
JA
= 125°C/W; 8-lead
MSOP: θ
JA
= 145°C/W.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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AD8021ARMZ

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Buy AD8021ARMZ
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers LOW-NOISE 16-Bit
Lifecycle:
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