IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA80N075L2 IXTP80N075L2
IXTH80N075L2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 80 A
I
SM
Repetitive, Pulse Width Limited by T
JM
320 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
160 ns
I
RM
14 A
Q
RM
1.3 μC
I
F
= 40A, -di/dt = 100A/s,
V
R
=
38V, V
GS
= 0V
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 24 30 36 S
C
iss
3600 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 935 pF
C
rss
325 pF
R
Gi
Integrated Gate Input Resistor 1.2
t
d(on)
15 ns
t
r
35 ns
t
d(off)
40 ns
t
f
12 ns
Q
g(on)
103 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
14 nC
Q
gd
48 nC
R
thJC
0.35 C/W
R
thCS
TO-220 0.50 C/W
TO-247 0.21 C/W
Safe Operating Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA V
DS
= 75V, I
D
= 2.86A, T
C
= 75°C, Tp = 5s 214 W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 0 (External)
