SI3499DV-T1-E3 Datasheet SI3499DV-T1-GE3, SI3499DV-T1-E3 | P1-P3

Vishay Siliconix

Si3499DV

Document Number: 73138

S11-1140-Rev. C, 13-Jun-11

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This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 1.5 V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET: 1.5 V Rated

• Ultra-Low On-Resistance

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()I

D

(A) Q

g

(Typ.)

- 8

0.023 at V

GS

= - 4.5 V

- 7

28

0.029 at V

GS

= - 2.5 V

- 6.2

0.036 at V

GS

= - 1.8 V

- 5.2

0.048 at V

GS

= - 1.5 V

- 5

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

Ordering Information: Si3499DV-T1-E3 (Lead (Pb)-free)

Marking Code:

99xxx

Si3499DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 8

V

Gate-Source Voltage

V

GS

± 5

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

- 7 - 5.3

A

T

A

= 85 °C

- 3.6 - 3.9

Pulsed Drain Current

I

DM

- 20

Continuous Source Current (Diode Conduction)

a

I

S

- 1.7 - 0.9

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

21.1

W

T

A

= 85 °C

10.6

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t  5 s

R

thJA

45 62.5

°C/W

Steady State 90 110

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

25 30

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Document Number: 73138

S11-1140-Rev. C, 13-Jun-11

Vishay Siliconix

Si3499DV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.35 - 0.75 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 5 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 8 V, V

GS

= 0 V

- 1

µA

V

DS

= - 8 V, V

GS

= 0 V, T

J

= 85 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

= - 5 V, V

GS

= - 4.5 V

- 20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

 - 4.5 V, I

D

= - 7 A

0.019 0.023



V

GS

= - 2.5 V, I

D

= - 6.2 A

0.024 0.029

V

GS

= - 1.8 V, I

D

= - 5.2 A

0.028 0.036

V

GS

= - 1.5 V, I

D

= - 3 A

0.035 0.048

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 7 A

28 S

Diode Forward Voltage

a

V

SD

I

S

= - 1.7 A, V

GS

= 0 V

- 0.63 - 1.1 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 4 V, V

GS

= - 4.5 V, I

D

= - 7 A

28 42

nCGate-Source Charge

Q

gs

2.9

Gate-Drain Charge

Q

gd

5.8

Gate Resistance

R

g

48.513

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 4 V, R

L

= 4 

I

D

 - 1 A, V

GEN

= - 4.5 V, R

g

= 6 

27 40

ns

Rise Time

t

r

65 100

Turn-Off Delay Time

t

d(off)

210 315

Fall Time

t

f

110 165

Source-Drain Reverse Recovery Time

t

rr

I

F

= - 1.7 A, dI/dt = 100 A/µs

40 70

Output Characteristics

0

5

10

15

20

25

30

012345

V

GS

= 5 V thru 2 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

1 V

1.5 V

Transfer Characteristics

0

5

10

15

20

25

30

0.0 0.4 0.8 1.2 1.6 2.0

T

C

= 125 °C

- 55 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

Document Number: 73138

S11-1140-Rev. C, 13-Jun-11

www.vishay.com

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Vishay Siliconix

Si3499DV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

-R

DS(on)

0.00

0.02

0.04

0.06

0.08

0.10

0 5 10 15 20 25 30

I

D

- Drain Current (A)

V

GS

= 1.5 V

V

GS

= 2.5 V

V

GS

= 4.5 V

V

GS

= 1.8 V

On-Resistance (W)

0

1

2

3

4

5

6

0 6 12 18 24 30 36

V

DS

= 4 V

I

D

= 7 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

30

10

0.1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)

I

S

T

J

= 150 °C

T

J

= 25 °C

1

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

3500

0123456

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C - Capacitance (pF)

7

8

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 7 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

0.00

0.02

0.04

0.06

0.08

0.10

012345

I

D

= 7 A

-R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

SI3499DV-T1-E3

SI3499DV-T1-E3

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