VS-40TPS12LHM3, VS-40TPS12ALHM3
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Vishay Semiconductors
Revision: 22-Feb-18
4
Document Number: 95925
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
250
300
350
400
450
500
550
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half S
ine Wave On-state Current (A)
Initial T = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
40TPS.. series
At any rated load condition and with
rated V
RRM
applied following surge.
250
300
350
400
450
500
550
600
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum non repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained.
40TPS.. series
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
1
10
100
0.511.52
T
J
= 25 °C
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
T
J
= 125 °C
40TPS..A series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Voltage (V)
Instantaneous Gate Current (A)
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
(4) (3) (2) (1)
I
GD
V
GD
T
J
= 125 °C
T
J
= 50 °C
T
J
= - 40 °C
a)
b)
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
t
r
= 1 μs, t
p
≥ 6 μs
Frequency limited by PG(AV)40TPS..Series
