NCV6334B
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (V
IN
= 3.6 V, V
OUT
= 1.8 V, L = 1 mH, C = 10 mF, typical values are referenced to T
J
= 25°C, Min
and Max values are referenced to T
J
up to 125°C, unless other noted.)
Symbol Characteristics Test Conditions Min Typ Max Unit
SUPPLY VOLTAGE
V
IN
Input Voltage V
IN
Range (Note 10) 2.3 − 5.5 V
SUPPLY CURRENT
I
Q
V
IN
Quiescent Supply Current EN high, no load, no switching, PFM Mode − 30 −
mA
I
SD
V
IN
Shutdown Current EN low − − 1
mA
OUTPUT VOLTAGE
V
OUT
Output Voltage Range (Note 7) 0.6 − V
IN
V
V
FB
FB Voltage PWM Mode 594 600 606 mV
FB Voltage in Load Regulation V
IN
= 3.6 V, I
OUT
from 200 mA to I
OUTMAX
,
PWM mode (Note 7)
− −0.5 − %/A
FB Voltage in Line Regulation I
OUT
= 200 mA, V
IN
from MAX (V
NOM
+
0.5 V, 2.3 V) to 5.5 V, PWM mode (Note 7)
− 0 − %/V
D
MAX
Maximum Duty Cycle (Note 7) − 100 − %
OUTPUT CURRENT
I
OUTMAX
Output Current Capability (Note 7) 2.0 − − A
I
LIM
Output Peak Current Limit 2.3 2.8 3.3 A
VOLTAGE MONITOR
V
INUV−
V
IN
UVLO Falling Threshold − − 2.3 V
V
INHYS
V
IN
UVLO Hysteresis 60 −
200
mV
V
PGL
Power Good Low Threshold V
OUT
falls down to cross the threshold
(percentage of FB voltage) (Note 8)
87 90 92 %
V
PGHYS
Power Good Hysteresis V
OUT
rises up to cross the threshold
(percentage of Power Good Low Threshold
(V
PGL
) voltage) (Note 8)
0 3 5 %
Td
PGH1
Power Good High Delay in Start Up From EN rising edge to PG going high.
(Note 8)
− 1.15 − ms
Td
PGL1
Power Good Low Delay in Shut
Down
From EN falling edge to PG going low.
(Notes 7 and 8)
− 8 −
ms
Td
PGH
Power Good High Delay in Regula-
tion
From V
FB
going higher than 95% nominal
level to PG going high.
Not for the first time in start up. (Notes 7
and 8)
− 5 −
ms
Td
PGL
Power Good Low Delay in Regulation From V
FB
going lower than 90% nominal
level to PG going low. (Notes 7 and 8)
− 8 −
ms
VPG_L Power Good Pin Low Voltage Voltage at PG pin with 5 mA sink current
(Note 8)
− − 0.3 V
PG_LK Power Good Pin Leakage Current 3.6 V at PG pin when power good valid
(Note 8)
− − 100 nA
INTEGRATED MOSFETs
R
ON_H
High−Side MOSFET ON Resistance V
IN
= 3.6 V (Note 9)
V
IN
= 5 V (Note 9)
− 140
130
200
−
mW
R
ON_L
Low−Side MOSFET ON Resistance V
IN
= 3.6 V (Note 9)
V
IN
= 5 V (Note 9)
− 110
100
140
−
mW
7. Guaranteed by design, not tested in production.
8. Power Good function is for NCV6334B devices only.
9. Maximum value applies for T
J
= 85°C.
10.Operation above 5.5 V input voltage for extended periods may affect device reliability.
