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2 - 4
20101007a
VUB 120
IXYS reserves the right to change limits, test conditions and dimensions.
IGBT
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
-20
-30
+20
+30
V
V
I
C25
I
C80
collector current
DC T
C
= 25°C
DC T
C
= 80°C
140
100
A
A
P
tot
total power dissipation
T
C
= 25°C 140 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 50 A; V
GE
= 15 V T
VJ
= 25°C 2.1 V
V
GE(th)
gate emitter threshold voltage
I
C
= 4 mA; V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
0.2
1
mA
mA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 7.4 nF
t
d(on)
t
d(off)
E
on
E
off
turn-on delay time
turn-off delay time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 15 W; L = 100 µH
170
680
11
8
ns
ns
mJ
mJ
I
CM
V
CEK
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 10 W; L = 100 µH
clamped inductive load
; T
VJ
= 125°C
280
< V
CES
-L
S
·d
I
/dt
A
V
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= 900 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 15 W; non-repetitive
10 µs
RBSOA
reverse bias safe operating area
V
CE
= 1200 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 15 W; L = 100 µH; clamped inductive load
150 A
R
thJC
thermal resistance junction to case
0.22 K/W
R
thCH
thermal resistance case to heatsink
0.1 K/W
Fast Recovery Diode
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitive reverse voltage
T
VJ
= 150°C 1200 V
I
FAV
average forward current
rect.; d = 0.5 T
C
= 80°C 34 A
I
FRMS
rms forward current
rect.; d = 0.5 T
C
= 80°C 48 A
I
FSM
max. surge forward current
t = 10 ms T
VJ
= 45°C
t = 10 ms T
VJ
= 150°C
200
180
A
A
P
tot
total power dissipation
T
C
= 25°C 140 W
V
F0
r
F
threshold voltage
slope resistance
T
VJ
= 150°C
for power loss calculation only
1.3
15
V
mW
V
F
forward voltage
I
F
= 30 A T
VJ
= 25°C 2.7 V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C
0.5
1
mA
mA
I
RM
reverse recovery current
I
F
= 50 A; V
R
= 100 V; di
F
/dt = -100 A/µs
8 12 A
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; di
F
/dt = -100 A/µs
40 60 ns
R
thJC
thermal resistance junction to case
0.9 K/W
R
thCH
thermal resistance case to heatsink
0.3 K/W
T
C
= 25°C unless otherwise stated
