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IRFZ44VS

P1-P3P4-P6P7-P9P10-P11
IRFZ44VS
IRFZ44VL
HEXFET
®
Power MOSFET
01/04/02
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 55
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 39 A
I
DM
Pulsed Drain Current 220
P
D
@T
C
= 25°C Power Dissipation 115 W
Linear Derating Factor 0.77 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 115 mJ
I
AR
Avalanche Current 55 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.3 °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
www.irf.com 1
V
DSS
= 60V
R
DS(on)
= 16.5mΩ
I
D
= 55A
S
D
G
Advanced HEXFET
®
Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44VL) is available for low-profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
D
2
Pak
IRFZ44VS
TO-262
IRFZ44VL
PD - 94050A
IRFZ44VS/IRFZ44VL
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 2.5 V T
J
= 25°C, I
S
= 51A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 70 105 ns T
J
= 25°C, I
F
= 51A
Q
rr
Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
55
220
A
Starting T
J
= 25°C, L = 89µH
R
G
= 25Ω, I
AS
= 51A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 51A, di/dt ≤ 227A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– VV
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ V
GS
= 10V, I
D
= 31A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 24 ––– ––– SV
DS
= 25V, I
D
= 31A
––– ––– 25
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 250 V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 67 I
D
= 51A
Q
gs
Gate-to-Source Charge ––– ––– 18 nC V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 25 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 13 ––– V
DD
= 30V
t
r
Rise Time ––– 97 ––– I
D
= 51A
t
d(off)
Turn-Off Delay Time ––– 40 ––– R
G
= 9.1Ω
t
f
Fall Time ––– 57 ––– R
D
= 0.6Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1812 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 393 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 103 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRFZ44VS/IRFZ44VL
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
(
C
)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
55A
1
10
100
1000
4 5 6 7 8 9 10 11 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
P1-P3P4-P6P7-P9P10-P11

IRFZ44VS

Mfr. #:
Buy IRFZ44VS
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 55A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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