ZX5T869ZTA

SEMICONDUCTORS
SUMMARY
BV
CEO
= 25V : R
SAT
= 25m ; I
C
= 5.5A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 25V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
SAT
= 25m at 6.5A
5.5 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 20 amps
APPLICATIONS
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC modules
Backlight Inverters
DEVICE MARKING
869
ZX5T869Z
ISSUE 2 - JUNE 2005
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
S
O
T
8
9
PINOUT
TOP VIEW
DEVICE REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZX5T869ZTA
7" 12mm
embossed
1000 units
ORDERING INFORMATION
ZX5T869Z
SEMICONDUCTORS
ISSUE 2 - JUNE 2005
2
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
60 V
Collector-emitter voltage BV
CEO
25 V
Emitter-base voltage BV
EBO
7V
Continuous collector current
(a)
I
C
5.5 A
Peak pulse current I
CM
20 A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.5
12
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/°C
Operating and storage temperature range T
j
,T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction to ambient
(a)
R
JA
83 °C/W
Junction to ambient
(b)
R
JA
60 °C/W
NOTES:
(a)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZX5T869Z
SEMICONDUCTORS
ISSUE 2 - JUNE 2005
3
CHARACTERISTICS

ZX5T869ZTA

Mfr. #:
Manufacturer:
Description:
TRANS NPN 25V 5.5A SOT-89
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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