IXGH16N170 Datasheet IXGH16N170, IXGT16N170 | P1-P3

V

CES

= 1700 V

I

C25

= 32 A

V

CE(sat)

= 3.5 V

IXGH 16N170

IXGT 16N170

C (TAB)

G = Gate, C = Collector,

E = Emitter, TAB = Collector

G

C

E

TO-247 (IXGH)

Features

z

International standard packages

JEDEC TO-268 and

JEDEC TO-247 AD

z

High current handling capability

z

MOS Gate turn-on

- drive simplicity

z

Rugged NPT structure

z

Molding epoxies meet UL 94 V-0

flammability classification

Applications

z

Capacitor discharge & pulser circuits

z

AC motor speed control

z

DC servo and robot drives

z

DC choppers

z

Uninterruptible power supplies (UPS)

z

Switched-mode and resonant-mode

power supplies

Advantages

z

High power density

z

Suitable for surface mounting

z

Easy to mount with 1 screw,

(isolated mounting screw hole)

DS98996C(07/06)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

BV

CES

I

C

= 250 μA, V

GE

= 0 V 1700 V

V

GE(th)

I

C

= 250 μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C50μA

V

GE

= 0 V T

J

= 125°C 500 μA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15 V T

J

= 25°C 2.7 3.5 V

T

J

= 125°C 3.3 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1700 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 1700 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C32A

I

C90

T

C

= 90°C16A

I

CM

T

C

= 25°C, 1 ms 80 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 10 Ω I

CM

= 40 A

(RBSOA) Clamped inductive load @ 0.8 V

CES

P

C

T

C

= 25°C 190 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (M3) 1.13/10Nm/lb.in.

Weight TO-247 AD 6 g

TO-268 4 g

TO-268 (D3-Pak) (IXGT)

G

E

High Voltage

IGBT

C (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 16N170

IXGT 16N170

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXGH) Outline

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 10 14 S

Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %

I

C(ON)

V

GE

= 10V, V

CE

= 10V 65 A

C

ies

1650 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 75 pF

C

res

26 pF

Q

g

78 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

13 nC

Q

gc

24 nC

t

d(on)

45 ns

t

ri

48 ns

t

d(off)

400 600 ns

t

fi

770 1100 ns

E

off

9.3 14 mJ

t

d(on)

48 ns

t

ri

42 ns

E

on

1.5 mJ

t

d(off)

430 ns

t

fi

1170 ns

E

off

11.2 mJ

R

thJC

0.65 °C/W

R

thCS

(TO-247) 0.25 °C/W

Inductive load, T

J

= 125

°°

°C

I

C

= I

C90

, V

GE

= 15 V

V

CE

= 0.8 V

CES

, R

G

= R

off

= 10 Ω

Inductive load, T

J

= 25

°°

°C

I

C

= I

C90

, V

GE

= 15 V

V

CE

= 0.8 V

CES

, R

G

= R

off

= 10 Ω

TO-268 (IXGT) Outline (D3-Pak)

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Ref: IXYS CO 0052 RA

IXGH 16N170

IXGT 16N170

Fi

g

. 2. Extended Output Characteristics

@ 25 deg. C

0

20

40

60

80

10 0

12 0

14 0

16 0

0 2 4 6 81012141618

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 7V

9V

1 1V

7V

1 3 V

1 5 V

Fi

g

. 3. Output Characteristics

@ 125 Deg. C

0

4

8

12

16

20

24

28

32

0.5 1.5 2.5 3.5 4.5 5.5 6.5

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 7V

1 5V

1 3V

1 1 V

7V

9V

Fi

g

. 1. Output Characteristics

@ 25 Deg. C

0

4

8

12

16

20

24

28

32

0.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 7V

1 5V

1 3V

1 1 V

7V

9V

Fig. 6. Input Admittance

0

8

16

24

32

40

48

56

345678910

V

GE

- Volts

I

C

- Amperes

T

J

= 1 25

º

C

25

º

C

-40

º

C

Fig. 4. Temperature Dependence of V

CE(sat)

0.6

0.8

1

1. 2

1. 4

1. 6

1. 8

2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

C E (sat)

- Normalized

I

C

= 32A

I

C

= 1 6A

I

C

= 8A

V

G E

= 1 5V

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emiiter voltage

1

2

3

4

5

6

7

8

9

10

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

T

J

= 25

º

C

I

C

= 32A

16 A

8A

IXGH16N170

IXGH16N170

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