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MS1509

P1-P3
MS1509.PDF 5-28-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1509
DESCRIPTION:DESCRIPTION:
The MS1509 is a 28 V gold metallized, Class C epitaxial silicon
NPN planar transistor designed for UHF military and commercial
equipment. The MS1508 is an internally matched, broadband
device optimized for operation within the 100 – 500 MHz fre-
quency range. This device utilizes diffused emitter resistors
to achieve 5:1 VSWR load mismatch capability at rated
operating conditions.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 33 V
V
CES
Collector-Emitter Voltage 60 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Device Current 15 A
P
DISS
Power Dissipation
260
W
TJ Junction Temperature +200
°°C
T
STG
Storage Temperature -65 to +150
°°C
Thermal DataThermal Data
R
TH(J-C)
Thermal Resistance Junction-case
0.67
°°C/W
FeaturesFeatures
• 500 MHz
• 28 VOLTS
• POUT = 100 WATTS
• G
P
= 5.5 dB GAIN MINIMUM
• EFFICIENCY 55%
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
MS1509.PDF 5-28-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1509
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 100 mA I
E
= 0 mA 60 --- --- V
BV
CES
I
C
= 80 mA V
BE
= 0 V 60 --- --- V
BV
CEO
I
C
= 50 mA I
B
= 0 mA 33 --- ---
V
BV
EBO
I
E
= 20 mA I
C
= 0 mA 4.0 --- --- V
I
CBO
V
CB
= 30 V I
E
= 0 mA --- --- 10 mA
HFE V
CE
= 5 V I
C
= 1 mA 20 --- --- ---
DYNAMIC DYNAMIC
Test Conditions
Value
Min.
Typ.
Max.
Unit
P
OUT
f = 500 MHz P
IN
=28.2 W V
CC
= 28 V 100 --- --- W
G
P
f = 500 MHz P
IN
= 28.2 W V
CC
= 28 V 5.5 --- --- dB
ηη
C
f = 500 MHz P
IN
= 28.2 W V
CC
= 28 V 55 --- --- %
MS1509.PDF 5-28-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1509
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
P1-P3

MS1509

Mfr. #:
Buy MS1509
Manufacturer:
Microchip / Microsemi
Description:
RF Bipolar Transistors Bipolar/LDMOS Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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