STT5PF20V
2/8
ABSOLUTE MAXIMUM RATINGS
( ) Pulsewidthlimitedbysafeoperatingarea
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0)
20 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
20 V
V
GS
Gate- source Voltage ± 8 V
I
D
Drain Current (continuous) at T
C
= 25°C
5A
I
D
Drain Current (continuous) at T
C
= 100°C
3.1 A
I
DM
( )
Drain Current (pulsed) 20 A
P
TOT
Total Dissipation at T
C
= 25°C
1.6 W
Rthj-amb Thermal Resistance Junction-ambient Max 78 °C/W
T
j
Max. Operating Junction Temperature 150 °C
T
stg
Storage Temperature –55 to 150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
=250µA,V
GS
= 0 20 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, T
C
= 125 °C
10 µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 8V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
= 250µA
0.45 V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5V, I
D
= 2.5 A
0.065 0.080 Ω
V
GS
= 2.5V, I
D
= 2.5 A
0.085 0.10 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
=15V
,
I
D
= 2.5 A 6.6 S
C
iss
Input Capacitance
V
DS
= 15 V, f = 1 MHz, V
GS
=0
412 pF
C
oss
Output Capacitance 179 pF
C
rss
Reverse Transfer
Capacitance
42.5 pF
Obsolete Product(s) - Obsolete Product(s)
