MID145-12A3 Datasheet MID145-12A3 | P1-P3

MID145-12A3

Boost Chopper + free wheeling Diode

IGBT (NPT) Module

1

4

5

3

2

Part number

MID145-12A3

Backside: isolated

C25

CE(sat)

VV2.2

CES

160

1200

=

V= V

I= A

Features / Advantages: Applications: Package:

● NPT IGBT technology

● low saturation voltage

● low switching losses

● switching frequency up to 30 kHz

● square RBSOA, no latch up

● high short circuit capability

● positive temperature coefficient for

easy parallelling

● MOS input, voltage controlled

● ultra fast free wheeling diodes

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Inductive heating, cookers

● Pumps, Fans

Y4

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

IXYS reserves the right to change limits, conditions and dimensions.

20131206aData according to IEC 60747and per semiconductor unless otherwise specified

MID145-12A3

V = V

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

2.60

R 0.18 K/

W

R

min.

95

V

RSM

V

1T = 25°C

VJ

T = °C

VJ

m

A

3V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

80

P

tot

700

W

T = 25°C

C

R K/

W

0.18

100

1200

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Uni

t

3.10

T = 25°C

VJ

125

V

F0

V

1.30T = °C

VJ

150

r

F

7.5

m

Ω

V

2.00T = °C

VJ

I = A

F

V

100

2.40

I = A

F

200

I = A

F

200

threshold voltage

slope resistance

for power loss calculation only

m

A

125

V

RRM

V

1200

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

30

j

unction capacitance

V = V600 T = 25°Cf = 1 MHz

R

VJ

p

F

I

FSM

t = 10 ms; (50 Hz), sine; T = 45°C

VJ

max. forward surge current

V = 0 V

R

T = °C

VJ

150

700

A

1200

FAV

d =DC current 1

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Free Wheeling Diode FWD

1200

IXYS reserves the right to change limits, conditions and dimensions.

20131206aData according to IEC 60747and per semiconductor unless otherwise specified

MID145-12A3

-di /dt = A/µs

T = °C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collector current

A

160

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions

Unit

110

V

CE(sat)

total power dissipation

700

W

collector emitter leakage current

6.5

V

turn-on delay time

100

ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gate emitter voltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

200

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current

V = ±20 V

GE

2.7

5.54.5

mA

9

mA

6

400

G(on)

total gate charge

V = V; V = 15 V; I = A

CE

Q

GE C

480

nC

t

E

d(on)

r

d(off)

f

on

off

60

ns

600

ns

90

ns

16

mJ

15

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE

C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

330

A

R

thJC

thermal resistance junction to case

0.18

K/W

V

RRM

V1200

max. repetitive reverse voltage

T = 25°C

VJ

T = 25°C

forward current

A

150

A

C

95T = °C

C

I

F25

I

F

T = 25°C

forward voltage

V

2.60

V

VJ

1.90T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current

mA

1

mA

VJ

1.5T = 125°C

VJ

I

R R RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

8.5

µC

62

A

200

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

1.5

mJ

reverse recovery energy

R

thJC

thermal resistance junction to case

0.45

K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

100

4

100

6.8

600

1200

600

I

CM

2.2

R

thCH

thermal resistance case to heatsink

0.18

K/W

R

thCH

thermal resistance case to heatsink

0.45 K/W

Boost IGBT

Boost Diode BD

600 V

V = V

CEmax

1200

80

125

nA

IXYS reserves the right to change limits, conditions and dimensions.

20131206aData according to IEC 60747and per semiconductor unless otherwise specified

MID145-12A3

MID145-12A3

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