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MMBT2222ALT1

P1-P3P4-P6P7-P7
MMBT2222L, MMBT2222AL, SMMBT2222AL
www.onsemi.com
4
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
T
J
= 25°C
I
C
= 1.0 mA
10 mA 150 mA
500 mA
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20
70
5.0
100
5.0 7.0 30 50
200
10
30
7.0
20
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn−Off Time
I
C
, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t′
s
= t
s
- 1/8 t
f
t
f
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20
50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
R
S
= OPTIMUM
R
S
= SOURCE
R
S
= RESISTANCE
I
C
= 1.0 mA, R
S
= 150 W
500 mA, R
S
= 200 W
100 mA, R
S
= 2.0 kW
50 mA, R
S
= 4.0 kW
f = 1.0 kHz
I
C
= 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500
1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
MMBT2222L, MMBT2222AL, SMMBT2222AL
www.onsemi.com
5
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 50
0.2 0.3 0.5 0.7
C
cb
20
30
C
eb
Figure 10. Current−Gain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f
T
, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20
30 50 70 100
V
CE
= 20 V
T
J
= 25°C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
1
0.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
1.3
Figure 13. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.6
0.9
1.2
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.8
1.0
V
CE
= 1 V
150°C
−55°C
25°C
Figure 14. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT (mV/ C)
-1.0
-1.5
-2.5
°
R
q
VC
for V
CE(sat)
R
q
VB
for V
BE
-2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 50
0
MMBT2222L, MMBT2222AL, SMMBT2222AL
www.onsemi.com
6
Figure 15. Safe Operating Area
V
CE
(Vdc)
1001010.10.01
0.001
0.01
0.1
1
10
IC (A)
Single Pulse Test
@ T
A
= 25°C
Thermal Limit
100 ms
1 s
10 ms
1 ms
ORDERING INFORMATION
Device Specific Marking Code Package Shipping
†
MMBT2222LT1G M1B SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBT2222ALT1G,
SMMBT2222ALT1G
1P SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBT2222LT3G M1B SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBT2222ALT3G,
SMMBT2222ALT3G
1P SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
P1-P3P4-P6P7-P7

MMBT2222ALT1

Mfr. #:
Buy MMBT2222ALT1
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V
Lifecycle:
New from this manufacturer.
Delivery:
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