OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SMMBT2222ALT3G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 11
1 Publication Order Number:
MMBT2222LT1/D
MMBT2222L, MMBT2222AL,
SMMBT2222AL
General Purpose Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT2222L
MMBT2222AL, SMMBT2222AL
V
CEO
30
40
Vdc
Collector−Base Voltage
MMBT2222L
MMBT2222AL, SMMBT2222AL
V
CBO
60
75
Vdc
Emitter−Base Voltage
MMBT2222L
MMBT2222AL, SMMBT2222AL
V
EBO
5.0
6.0
Vdc
Collector Current − Continuous I
C
600 mAdc
Collector Current − Peak (Note 3) I
CM
1100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx = 1P or M1B
M = Date Code*
G = Pb−Free Package
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
2
1
3
xxx M G
G
www.onsemi.com
MMBT2222L, MMBT2222AL, SMMBT2222AL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0) MMBT2222
MMBT2222A
V
(BR)CEO
30
40
−
−
Vdc
Collector−Base Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0) MMBT2222
MMBT2222A
V
(BR)CBO
60
75
−
−
Vdc
Emitter−Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0) MMBT2222
MMBT2222A
V
(BR)EBO
5.0
6.0
−
−
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) MMBT2222A, SMMBT2222A
I
CEX
− 10
nAdc
Collector Cutoff Current (V
CB
= 50 Vdc, I
E
= 0) MMBT2222
(V
CB
= 60 Vdc, I
E
= 0) MMBT2222A, SMMBT2222A
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C) MMBT2222
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C) MMBT2222A, SMMBT2222A
I
CBO
−
−
−
−
0.01
0.01
10
10
mAdc
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0) MMBT2222A, SMMBT2222A I
EBO
− 100 nAdc
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) MMBT2222A, SMMBT2222A I
BL
− 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= −55°C) MMBT2222A only
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 4)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 4)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 4) MMBT2222
MMBT2222A, SMMBT2222A
h
FE
35
50
75
35
100
50
30
40
−
−
−
−
300
−
−
−
−
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= 150 mAdc, I
B
= 15 mAdc) MMBT2222
MMBT2222A, SMMBT2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc) MMBT2222
MMBT2222A, SMMBT2222A
V
CE(sat)
−
−
−
−
0.4
0.3
1.6
1.0
Vdc
Base−Emitter Saturation Voltage (Note 4)
(I
C
= 150 mAdc, I
B
= 15 mAdc) MMBT2222
MMBT2222A, SMMBT2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc) MMBT2222
MMBT2222A, SMMBT2222A
V
BE(sat)
−
0.6
−
−
1.3
1.2
2.6
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 5)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz) MMBT2222
MMBT2222A, SMMBT2222A
f
T
250
300
−
−
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) MMBT2222
MMBT2222A, SMMBT2222A
C
ibo
−
−
30
25
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
h
ie
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
h
re
−
−
8.0
4.0
X 10
−4
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
h
fe
50
75
300
375
−
MMBT2222L, MMBT2222AL, SMMBT2222AL
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic UnitMaxMinSymbol
SMALL−SIGNAL CHARACTERISTICS
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A
h
oe
5.0
25
35
200
mmhos
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A
rb, C
c
− 150
ps
Noise Figure (I
C
= 100 mAdc, V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
NF
− 4.0
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
= −0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
− 10
ns
Rise Time t
r
− 25
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
− 225
ns
Fall Time t
f
− 60
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
+30 V
200
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
C
S
* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
, DC CURRENT GAIN
T
J
= 125°C
25°C
-55°C
V
CE
= 1.0 V
V
CE
= 10 V
P1-P3P4-P6P7-P7

SMMBT2222ALT3G

Mfr. #:
Buy SMMBT2222ALT3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR SPCL TR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet