PMPB95ENEA/FX Datasheet PMPB95ENEAX, PMPB95ENEA/FX | P7-P9

NXP Semiconductors

PMPB95ENEA

80 V, single N-channel Trench MOSFET

Product data sheet 17 December 2013 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 80 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C 1.3 1.7 2.7 V

V

DS

= 80 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µAI

DSS

drain leakage current

V

DS

= 80 V; V

GS

= 0 V; T

j

= 150 °C - - 10 µA

V

GS

= 20 V; V

DS

= 0 V; T

j

= 25 °C - - 10 µA

V

GS

= -20 V; V

DS

= 0 V; T

j

= 25 °C - - -10 µA

V

GS

= 10 V; V

DS

= 0 V; T

j

= 25 °C - - 1 µA

I

GSS

gate leakage current

V

GS

= -10 V; V

DS

= 0 V; T

j

= 25 °C - - -1 µA

V

GS

= 10 V; I

D

= 2.8 A; T

j

= 25 °C - 80 105 mΩ

V

GS

= 10 V; I

D

= 2.8 A; T

j

= 150 °C - 154 202 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 4.5 V; I

D

= 2.6 A; T

j

= 25 °C - 92 120 mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 2.8 A; T

j

= 25 °C - 13.3 - S

R

G

gate resistance f = 1 MHz - 4.7 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 9.9 14.9 nC

Q

GS

gate-source charge - 1.2 - nC

Q

GD

gate-drain charge

V

DS

= 40 V; I

D

= 2.8 A; V

GS

= 10 V;

T

j

= 25 °C

- 1.8 - nC

C

iss

input capacitance - 504 - pF

C

oss

output capacitance - 43 - pF

C

rss

reverse transfer

capacitance

V

DS

= 40 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 26 - pF

t

d(on)

turn-on delay time - 5 - ns

t

r

rise time - 4 - ns

t

d(off)

turn-off delay time - 15 - ns

t

f

fall time

V

DS

= 40 V; I

D

= 2.8 A; V

GS

= 10 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 7 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 1.2 A; V

GS

= 0 V; T

j

= 25 °C - 0.8 1.2 V

NXP Semiconductors

PMPB95ENEA

80 V, single N-channel Trench MOSFET

Product data sheet 17 December 2013 7 / 15

V

DS

(V)

0 542 31

aaa-008543

6.2

3.1

9.3

12.4

I

D

(A)

0

10 V

4.5 V

3.6 V

3.2 V

3 V

2.8 V

V

GS

= 2.5 V

T

j

= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-008544

V

GS

(V)

0 321

10

-4

10

-5

10

-3

I

D

(A)

10

-6

min typ max

T

j

= 25 °C; V

DS

= 5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

aaa-008545

I

D

(A)

1 1395

200

100

300

400

R

DSon

(mΩ)

0

3.0 V 3.2 V

3.6 V

4.5 V

V

GS

= 2.8 V

10 V

T

j

= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

V

GS

(V)

0 10.07.52.5 5.0

aaa-008546

200

100

300

400

R

DSon

(mΩ)

0

T

j

= 150 °C

T

j

= 25 °C

I

D

= 2.8 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMPB95ENEA

80 V, single N-channel Trench MOSFET

Product data sheet 17 December 2013 8 / 15

V

GS

(V)

0 431 2

aaa-008547

8

10

6

4

2

12

14

I

D

(A)

0

T

j

= 150 °C T

j

= 25 °C

V

DS

> I

D

× R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

aaa-008548

1.3

0.9

1.7

2.1

a

0.5

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

aaa-008549

2.0

2.5

1.5

1.0

0.5

3.0

3.5

V

GS(th)

(V)

0

max

typ

min

I

D

= 0.25 mA; V

DS

= V

GS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

aaa-008550

V

DS

(V)

10

-1

10

2

101

10

2

10

3

C

(pF)

10

C

iss

C

oss

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMPB95ENEA/FX

PMPB95ENEA/FX

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