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IRF3706

P1-P3P4-P6P7-P9P10-P12
www.irf.com 1
12/9/04
SMPS MOSFET
HEXFET
®
Power MOSFET
Benefits
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max I
D
20V 8.5mΩ 77A
Notes through are on page 11
D
2
Pak
IRF3706S
TO-220AB
IRF3706
TO-262
IRF3706L
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial Use
Applications
l High Frequency Buck Converters for
Computer Processor Power
IRF3706
IRF3706S
IRF3706L
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-Source Voltage V
V
GS
Gate-to-Source Voltage V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
C
= 100°C
Maximum Power Dissipation
W
Linear Derating Factor W/°C
T
J
,T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 1.7
R
θ
cs
Case-to-Sink, Flat, Greased Surface
0.50 ––– °C/W
R
θ
JA
––– 62
R
θ
JA
Junction-to-Ambient( PCB mount)
––– 40
-55 to + 175
Max.
77
54
280
20
± 12
88
0.59
44
PD - 93936C
IRF3706/S/L
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– ––– V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficie
––– 0.021 ––– V/°C
Reference to 25°C, I
D
= 1mA
––– 6.0 8.5
V
GS
= 10V, I
D
= 15A
R
DS(on)
Static Drain-to-Source On-Resistan
––– 7.3 10.5
m
Ω
V
GS
= 4.5V, I
D
= 12A
––– 11 22
V
GS
= 2.8V, I
D
= 7.5A
V
GS(th)
Gate Threshold Voltage 0.6 ––– 2 V
V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
V
DS
= 16V, V
GS
= 0V
––– ––– 100
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -200
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 53 ––– ––– S
V
DS
= 16V, I
D
= 57A
Rg Gate Resistance ––– 1.8 –––
Ω
Q
g
Total Gate Charge ––– 23 35
I
D
= 28A
Q
gs
Gate-to-Source Charge ––– 8.0 12 nC
V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 5.5 8.3
V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 16 24
V
GS
= 0V, V
DS
=10V
t
d(on)
Turn-On Delay Time ––– 6.8 –––
V
DD
= 10V
t
r
Rise Time ––– 87 –––
I
D
= 28A
t
d(off)
Turn-Off Delay Time ––– 17 ––– ns
R
G
= 1.8
Ω
t
f
Fall Time ––– 4.8 –––
V
GS
= 4.5V
C
iss
Input Capacitance ––– 2410 –––
V
GS
= 0V
C
oss
Output Capacitance ––– 1070 ––– pF
V
DS
= 10V
C
rss
Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current ––– –––
77
MOSFET symbol
(Body Diode) A showing the
I
SM
Pulsed Source Current ––– ––– 280 integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage ––– 0.88 1.3 V
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
––– 0.82 –––
T
J
= 125°C, I
S
= 36A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 45 68 ns
T
J
= 25°C, I
F
= 36A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 65 98 nC
di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 49 74 ns
T
J
= 125°C, I
F
= 36A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 78 120 nC
di/dt = 100A/µs
Max.
220
28
Typ.
–––
–––
IRF3706/S/L
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
P1-P3P4-P6P7-P9P10-P12

IRF3706

Mfr. #:
Buy IRF3706
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 77A TO-220AB
Lifecycle:
New from this manufacturer.
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