RJK6011DJE Preliminary
R07DS1153EJ0400 Rev.4.00 Page 2 of 6
Jan 28, 2014
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
600 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 1 μAV
DS
= 600 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±0.1 μAV
GS
= ±30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
3 — 5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 35 52 Ω I
D
= 0.05 A, V
GS
= 10 V
Note2
Input capacitance Ciss — 25 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Output capacitance Coss — 4.7 — pF
Reverse transfer capacitance Crss — 0.9 — pF
Turn-on delay time t
d(on)
— 33 — ns
I
D
= 0.05 A
V
GS
= 10 V
R
L
= 6000 Ω
Rg = 10 Ω
Rise time t
r
— 16 — ns
Turn-off delay time t
d(off)
— 54 — ns
Fall time t
f
— 300 — ns
Total gate charge Qg — 3.7 — nC
V
DD
= 480 V
V
GS
= 10 V
I
D
= 0.1 A
Gate to source charge Qgs — 0.4 — nC
Gate to drain charge Qgd — 2.7 — nC
Body-drain diode forward voltage V
DF
— 0.80 1.35 V I
F
= 0.1 A, V
GS
= 0
Note2
Notes: 2. Pulse test
3. Since this device is equipped with high voltage FET chip (V
DSS
≥ 600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
