OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRF3709ZPBF

P1-P3P4-P6P7-P9P10-P12P13-P13
IRF3709Z/S/LPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 5 10 15 20 25
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 17A
0.0 0.5 1.0 1.5 2.0 2.5
V
SD
, Source-to-Drain Voltage (V)
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
IRF3709Z/S/LPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
-75 -50 -25 0 25 50 75 100 125 150 175 200
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.832 0.000221
1.058 0.001171
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci i/Ri
Ci= τi/Ri
IRF3709Z/S/LPbF
6 www.irf.com
Fig 13. On-Resistance vs. Gate Voltage
Fig 12. On-Resistance vs. Drain Current
Fig 16. Maximum Avalanche Energy
vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
15V
20V
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
2 3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
2
4
6
8
10
12
14
16
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 21A
T
J
= 25°C
T
J
= 125°C
10.0 20.0 30.0 40.0 50.0 60.0 70.0
I
D
, Drain Current (A)
4.00
5.00
6.00
7.00
8.00
9.00
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
Vgs = 10V
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
50
100
150
200
250
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 5.4A
8.0A
BOTTOM 17A
P1-P3P4-P6P7-P9P10-P12P13-P13

IRF3709ZPBF

Mfr. #:
Buy IRF3709ZPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet