NTTFS4C08NTAG

NTTFS4C08N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
10
100
1000
10000
5 1015202530
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−50 25 0 25 50 75 100 125 150
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.010
10 20 30 40 50 60 70
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
0
10
20
30
40
50
60
70
80
00.511.522.533.544.55
0 0.5 1 1.5 2 2.5 3
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
3.8 V
3.2 V
3.0 V
2.8 V
T
J
= 25°C
V
DS
= 3 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
I
D
= 30 A
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
3.6 V
3.4 V
4 V
4.2 V
4.5 V
5.5 V −
10 V
0
10
20
30
40
50
60
70
80
90
100
NTTFS4C08N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
0
2
4
6
8
10
12
14
16
18
20
22
25 50 75 100 125
150
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
0
2
4
6
8
10
12
14
16
18
20
0.4 0.5 0.6 0.7 0.8 0.9
1.0
1
10
100
1000
1 10 100
0
2
4
6
8
10
024681012141618
20
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20 25 30
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
I
D
= 20 A
10 ms
Q
gs
Q
T
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
NTTFS4C08N
www.onsemi.com
6
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
R(t) (°C/W)
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 14. G
FS
vs. I
D
I
D
(A)
G
FS
(S)
Figure 15. Avalanche Characteristics
PULSE WIDTH (SECONDS)
I
D
, DRAIN CURRENT (A)
1
10
100
T
A
= 25°C
T
A
= 85°C
1.0E−08 1.E−031.0E−07 1.0E−06 1.0E−05 1.0E−04
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

NTTFS4C08NTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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