V
RRM
= 50 V - 400 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Types up to 400 V V
RRM
Parameter Symbol 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) Unit
Re
etitive
eak reverse
1N3889 thru 1N3893R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
Diode
1N3893 (R)
voltage
RRM
RMS reverse voltage
V
RMS
35 70 140 280 V
DC blocking voltage
V
DC
50 100 200 400 V
Continuous forward current
I
F
12 12 12 12 A
Operating temperature
T
j
-65 to 150 -65 to 150 -65 to 150 -65 to 150 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 -65 to 175 -65 to 175 °C
Parameter Symbol 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) Unit
Diode forward voltage 1.4 1.4 1.4 1.4
25 25 25 25 μA
66 66 mA
Recovery Time
Maximum reverse recovery
time
T
RR
200 200 200 200 nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.0 2.0 2.0 2.0 °C/W
1N3893 (R)
2.0
420
12
600
90
25
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 150 °C
V
6
200
1.4
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
90 90
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
Reverse current
I
R
V
F
90 90
-65 to 150
-65 to 175
www.genesicsemi.com
1
