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SPP20N60S5

P1-P3P4-P6P7-P9P10-P11
2009-12-01Rev. 2.8
Page 4
SPP20N60S5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
I
S
T
C
=25°C - - 20 A
Inverse diode direct current,
pulsed
I
SM
- - 40
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=I
S
- 1 1.2 V
Reverse recovery time t
rr
V
R
=350V, I
F
=I
S
,
di
F
/dt=100A/µs
- 610 - ns
Reverse recovery charge Q
rr
- 12 - µC
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
th1
0.00769 K/W
R
th2
0.015
R
th3
0.029
R
th4
0.114
R
th5
0.136
R
th6
0.059
Thermal capacitance
C
th1
0.0003763
Ws/K
C
th2
0.001411
C
th3
0.001931
C
th4
0.005297
C
th5
0.012
C
th6
0.091
External Heatsink
T
j T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2009-12-01Rev. 2.8
Page 5
SPP20N60S5
1 Power dissipation
P
tot
= f (T
C
)
0 20 40 60 80 100 120
°C
160
T
C
0
20
40
60
80
100
120
140
160
180
200
W
240
SPP20N60S5
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25°C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 10 µs, V
GS
0 5 10 15 20
V
30
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75
I
D
10V
9V
8V
7V
20V
15V
12V
11V
2009-12-01Rev. 2.8
Page 6
SPP20N60S5
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=150°C
parameter: t
p
= 10 µs, V
GS
0 5 10 15
V
25
V
DS
0
5
10
15
20
25
A
35
I
D
6V
6.5V
7V
7.5V
8V
8.5V
9V
20V
12V
10V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
)
parameter:
T
j
=150°C, V
GS
0 5 10 15 20 25 30
A
40
I
D
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
mΩ
1.5
R
DS(on)
6V
6.5V
7V
7.5V
8V
8.5V
9V
10V
12V
20V
7 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 13 A, V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Ω
1.1
SPP20N60S5
R
DS(on)
typ
98%
8 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: t
p
= 10 µs
0 5 10
V
20
V
GS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
D
25°C
150°C
P1-P3P4-P6P7-P9P10-P11

SPP20N60S5

Mfr. #:
Buy SPP20N60S5
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 20A TO220-3 CoolMOS S5
Lifecycle:
New from this manufacturer.
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