VS-40CTQ045S-M3, VS-40CTQ045-1-M3
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Vishay Semiconductors
Revision: 15-Aug-15
2
Document Number: 94935
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 116 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1240
10 ms sine or 6 ms rect. pulse 350
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 4.40 mH 20 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.53
V
40 A 0.68
20 A
T
J
= 125 °C
0.48
40 A 0.67
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 115
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.27 V
Forward slope resistance r
t
8.72 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 2800 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
2.0
°C/W
Maximum thermal resistance,
junction to case per package
1.0
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style TO-263AB (D
2
PAK) 40CTQ045S
Case style TO-262AA 40CTQ045-1
