2004 Aug 02 2
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
PDTA114E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
−−50 V
I
O
output current (DC) −−100 mA
R1 bias resistor 10 − kΩ
R2 bias resistor 10 − kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE NPN COMPLEMENT
PHILIPS EIAJ
PDTA114EE SOT416 SC-75 03 PDTC114EE
PDTA114EEF SOT490 SC-89 03 PDTC114EEF
PDTA114EK SOT346 SC-59 03 PDTC114EK
PDTA114EM SOT883 SC-101 E5 PDTC114EM
PDTA114ES SOT54 (TO-92) SC-43 TA114E PDTC114ES
PDTA114ET SOT23 − *03
(1)
PDTC114ET
PDTA114EU SOT323 SC-70 *03
(1)
PDTC114EU
