©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
FJX4010R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -100 mA
P
C
Collector Power Dissipation 200 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
E
= -1mA, I
B
=0 -40 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -0.1 µA
h
FE
DC Current Gain V
CE
= -5V, I
C
= -1mA 100 600
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA -0.3 V
C
ob
Output Capacitance V
CB
= -10V, I
E
=0
f=1MHz
5.5 pF
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -5mA 200 MHz
R Input Resistor 7 10 13 KΩ
FJX4010R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=10KΩ)
• Complement to FJX3010R
Equivalent Circuit
B
E
C
R
S60
Marking
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
